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Número de pieza | SI1551DL | |
Descripción | Complementary 20-V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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No Preview Available ! Si1551DL
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
-20
rDS(on) (W)
1.9 @ VGS = 4.5 V
3.7 @ VGS = 2.7 V
4.2 @ VGS = 2.5 V
0.995 @ VGS = -4.5 V
1.600 @ VGS = -2.7 V
1.800 @ VGS = -2.5 V
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
ID (A)
0.30
0.22
0.21
-0.44
-0.34
-0.32
Marking Code
RD XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 85_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 85_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
0.30
0.22
0.25
0.30
0.16
20 -20
"12
0.29
- 0.44
-0.41
0.21
-0.31
-0.30
0.6 -1.0
0.23
-0.25
-0.23
0.27
0.30
0.27
0.14
0.16
0.14
-55 to 150
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71255
S-21374—Rev. B, 12-Aug-02
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
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1
1 page TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Si1551DL
Vishay Siliconix
N−CHANNEL
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
VGS = 5 thru 3 V
0.8 2.5 V
1.0
0.8
1 10
P−CHANNEL
Transfer Characteristics
TC = -55_C
25_C
0.6 0.6
0.4 2 V 0.4
125_C
0.2
0.0
0.0
3.0
1 V 1.5 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
3.0
2.5
2.0
VGS = 2.5 V
1.5 VGS = 2.7 V
1.0 VGS = 4.5 V
0.5
0.0
0.0
0.2 0.4 0.6 0.8
ID - Drain Current (A)
1.0
Document Number: 71255
S-21374—Rev. B, 12-Aug-02
0.2
0.0
0.0
100
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Capacitance
3.0
80 Ciss
60
40
Coss
20
Crss
0
04
8 12 16
VDS - Drain-to-Source Voltage (V)
20
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5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SI1551DL.PDF ] |
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SI1551DL | Complementary 20-V (D-S) MOSFET | Vishay Siliconix |
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