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Número de pieza | SI4340DY | |
Descripción | Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SI4340DY (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Si4340DY
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
Channel-1
Channel-2
20
0.012 @ VGS = 10 V
0.0175 @ VGS = 4.5 V
0.010 @ VGS = 10 V
0.0115 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
20 0.53 V @ 3 A
ID (A)
9.6
7.8
13.5
12.8
IF (A)
2.0
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
- Game Stations
- Notebook PC Logic
D1 1
D1 2
G1 3
G2 4
S2 5
S2 6
S2 7
SO-14
Top View
14 S1
13 S1
12 D2
11 D2
10 D2
9 D2
8 D2
D1
G1
Ordering Information: Si4340DY
Si4340DY-T1 (with Tape and Reel)
S1
N-Channel 1
MOSFET
G2
D2
Schottky Diode
S2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
9.6
7.7
1.8
2.0
1.28
"20
40
7.3
5.8
1.04
1.14
0.73
20
13.5
10.8
2.73
3.0
1.9
- 55 to 150
"16
50
9.5
7.5
1.30
1.43
0.91
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
Document Number: 72376
S-31857—Rev. A, 15-Sep-03
Channel-1
Typ Max
53 62.5
92 110
35 42
Channel-2
Typ Max
35 42
72 87
18 23
Schottky
Typ Max
40 48
76 93
21 25
Unit
_C/W
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1 page New Product
Si4340DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
CHANNEL−1
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
92_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72376
S-31857—Rev. A, 15-Sep-03
www.vishay.com
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SI4340DY.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI4340DY | Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode | Vishay Siliconix |
SI4340DY-T1 | Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode | Vishay Siliconix |
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