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PDF SI4405DY Data sheet ( Hoja de datos )
| Número de pieza | SI4405DY | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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P-Channel 30-V (D-S) MOSFET
Si4405DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
- 30 0.0075 @ VGS = - 10 V
ID (A)
- 17
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4405DY
Si4405DY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFETS
D 100% Rg Tested
APPLICATIONS
D Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS - 30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
- 17 - 11
- 13 - 9
- 60
- 2.9 - 1.30
3.5 1.6
2.1 1.0
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71913
S-31726—Rev. D, 18-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
www.vishay.com
1
1 page  
Si4405DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71913
S-31726—Rev. D, 18-Aug-03
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI4405DY.PDF ] | |
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