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PDF SI4410DY Data sheet ( Hoja de datos )
| Número de pieza | SI4410DY | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | NXP Semiconductors | |
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Si4410DY
N-channel enhancement mode field-effect transistor
M3D315 Rev. 02 — 05 July 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si4410DY in SOT96-1 (SO8).
2. Features
s Low on-state resistance
s Fast switching
s TrenchMOS™ technology.
3. Applications
s DC to DC convertors
s DC motor control
s Lithium ion battery applications
c
c s Notebook PC
s Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description
Simplified outline
1,2,3
4
source (s)
gate (g)
85
5,6,7,8
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
1 page  
Philips Semiconductors
Si4410DY
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
IGSS
ID(on)
RDSon
gate-source leakage current
On-state drain current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VDS = VGS; Tj = 25 °C; Figure 9
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±20 V; VDS = 0 V
VDS ≥ 5; VGS = 10 V
VGS = 10 V; ID = 10 A; Figure 7 and 8
VGS = 4.5 V; ID = 5 A; Figure 7 and 8
gfs forward transconductance
Qg(tot) total gate charge
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain (reverse) diode
VDS = 15 V; ID = 10 A; Figure 11
ID = 10 A; VDD = 15 V; VGS = 5 V; Figure 14
ID = 10 A; VDD = 15 V; VGS = 10 V; Figure 14
VDD = 25 V; RD = 25 Ω; VGS = 10 V; RG = 6 Ω
VSD source-drain (diode forward) voltage IS = 2.3A; VGS = 0 V; Figure 13
trr reverse recovery time
IS = 2.3 A; dIS/dt = −100 A/µs; VGS = 0 V
Min Typ Max Unit
1−−V
− − 1 µA
− − 25 µA
− − 100 nA
20 − − A
− 11 13.5 mΩ
− 15 20 mΩ
− 34 − S
− 21.5 34 nC
− 40 60 nC
− 8 − nC
− 7 − nC
− 13.5 30 ns
− 9 20 ns
− 70 100 ns
− 30 80 ns
− 0.7 1.1 V
− 50 80 ns
9397 750 08048
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
11. Data sheet status
Si4410DY
N-channel enhancement mode field-effect transistor
Data sheet status [1]
Objective data
Preliminary data
Product data
Product status [2] Definition
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001 All rights reserved.
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