(PDF) SI4431ADY Datasheet - P-Channel 30-V (D-S) MOSFET

Número de pieza	SI4431ADY
Descripción	P-Channel 30-V (D-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! P-Channel 30-V (D-S) MOSFET Si4431ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = - 10 V - 30 0.052 @ VGS = - 4.5 V ID (A) - 7.2 - 5.5 FEATURES D TrenchFETr Power MOSFET SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg - 30 "20 - 7.2 - 5.3 - 5.8 - 4.2 - 30 - 2.1 - 1.3 2.5 1.35 1.6 0.87 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71803 S-95713—Rev. C, 18-Feb-02 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 35 75 17 Maximum 50 92 25 Unit _C/W www.vishay.com 1 1 page

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PDF SI4431ADY Data sheet ( Hoja de datos )