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PDF SI4434DY Data sheet ( Hoja de datos )
| Número de pieza | SI4434DY | |
| Descripción | N-Channel 250-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
N-Channel 250-V (D-S) MOSFET
Si4434DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
250 0.155 @ VGS = 10 V
0.162 @ VGS = 6.0 V
ID (A)
3.0
2.9
FEATURES
D PWM-OptimizedTrenchFETr Power MOSFET
D 100% Rg Tested
D Avalanche Tested
APPLICATIONS
D Primary Side Switch In:
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules
D
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4434DY—E3
Si4434DY-T1—E3 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
250
"20
3.0 2.1
2.4 1.7
30
2.6 1.3
13
8.4
3.1 1.56
2.0 1.0
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
33
65
17
Maximum
40
80
21
Unit
_C/W
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1 page  
New Product
Si4434DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100 1000
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI4434DY.PDF ] | |
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