|
|
PDF SI4435DY Data sheet ( Hoja de datos )
| Número de pieza | SI4435DY | |
| Descripción | Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SI4435DY (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
S
S
S
G
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
PD- 93768A
Si4435DY
HEXFET® Power MOSFET
A
1 8D
2
7D
VDSS = -30V
3 6D
4 5 D RDS(on) = 0.020Ω
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
-30
-8.0
-6.4
-50
2.5
1.6
0.02
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
10/14/99
1 page  
Si4435DY
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.20
0.10
0.00
-0.10
Id = -250µA
-0.20
-0.30
-0.40
-50 -25
0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SI4435DY.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SI4435DY | 30V P-Channel PowerTrench MOSFET |  Fairchild Semiconductor |
| SI4435DY | Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm | International Rectifier |
| SI4435DYPBF | HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |