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PDF SI4925BDY Data sheet ( Hoja de datos )
| Número de pieza | SI4925BDY | |
| Descripción | Dual P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.025 @ VGS = - 10 V
- 30
0.041 @ VGS = - 4.5 V
ID (A)
- 7.1
- 5.5
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4925BDY
Si4925BDY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
S1 S2
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 30
"20
- 7.1 - 5.3
- 5.7 - 4.3
- 40
- 1.7 - 0.9
2.0 1.1
1.3 0.7
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
85
30
Maximum
62.5
110
40
Unit
_C/W
www.vishay.com
1
1 page  
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI4925BDY.PDF ] | |
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