(PDF) Si4946EY-T1 Datasheet - Dual N-Channel 60-V (D-S)/ 175C MOSFET

Número de pieza	Si4946EY-T1
Descripción	Dual N-Channel 60-V (D-S)/ 175C MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.055 @ VGS = 10 V 0.075 @ VGS = 4.5 V ID (A) 4.5 3.9 SO-8 D S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 60 "20 4.5 3.8 30 2 2.4 1.7 - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70157 S-03950—Rev. D, 26-May-03 Symbol RthJA Limit 62.5 Unit _C/W www.vishay.com 2-1 1 page

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PDF Si4946EY-T1 Data sheet ( Hoja de datos )