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PDF SI6924EDQ Data sheet ( Hoja de datos )
| Número de pieza | SI6924EDQ | |
| Descripción | N-Channel 2.5-V (G-S) Battery Switch/ ESD Protection | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si6924EDQ
Vishay Siliconix
N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.033 @ VGS = 4.5 V
28 0.038 @ VGS = 3.0 V
0.042 @ VGS = 2.5 V
FEATURES
D Low rDS(on)
D VGS Max Rating: 14 V
D Exceeds 2-kV ESD Protection
D Low Profile TSSOP-8 Package
ID (A)
"4.6
"4.3
"4.1
ESD Protected
2000 V
D rDS(on) Rating at 2.5-V VGS
D 28-V VDS Rated
D Symetrical Voltage Blocking (Off Voltage)
DESCRIPTION
The Si6924EDQ is a dual n-channel MOSFET with ESD
protection and gate over-voltage protection circuitry
incorporated into the MOSFET. The device is designed for use
in Lithium Ion battery pack circuits. The common-drain
contsruction takes advantage of the typical battery pack
topology, allowing a further reduction of the device’s
on-resistance. The 2-stage input protection circuit is a unique
design, consisting of two stages of back-to-back zener diodes
separated by a resistor. The first stage diode is designed to
absorb most of the ESD energy. The second stage diode is
designed to protect the gate from any remaining ESD energy
and over-voltages above the gates inherent safe operating
range. The series resistor used to limit the current through the
second stage diode during over voltage conditions has a
maximum value which limits the input current to v 10 mA @
14 V and the maximum toff to 12 ms. The Si6924EDQ has been
optimized as a battery or load switch in Lithium Ion applications
with the advantage of both a 2.5-V rDS(on) rating and a safe
14-V gate-to-source maximum rating.
APPLICATION CIRCUITS
ESD and
Overvoltage
Protection
ESD and
Overvoltage
Protection
R**
G
D
S
Battery Protection Circuit
*Thermal connection to drain pins is required to achieve specific performance.
**R typical value is 1.8 kW by design.
See Typical Characteristics,
Gate-Current vs. Gate-Source Voltage, Page 3.
FIGURE 1. Typical Use In a Lithium Ion Battery Pack
Document Number: 70814
S-59522—Rev. C, 30-Nov-98
FIGURE 2. Input ESD and Overvoltage Protection
Circuit.
www.vishay.com
1
1 page  
Si6924EDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.08
10
TJ = 150_C
TJ = 25_C
0.06
0.04
0.02
ID = 4.6 A
1
0
0.2
0.1
0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
1.2
ID = 250 mA
-0.0
-0.1
-0.2
-0.3
-0.4
-50 -25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0.00
0
30
25
20
15
10
5
0
0.01
1234
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
5
0.1 1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 115_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Document Number: 70814
S-59522—Rev. C, 30-Nov-98
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI6924EDQ.PDF ] | |
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