(PDF) SI6925DQ Datasheet - Dual N-Channel 2.5-V (G-S) MOSFET

Número de pieza	SI6925DQ
Descripción	Dual N-Channel 2.5-V (G-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si6925DQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.05 @ VGS = 4.5 V 20 0.06 @ VGS = 3.0 V 0.08 @ VGS = 2.5 V ID (A) "3.4 "3.1 "2.7 TSSOP-8 D1 1 D S1 2 S1 3 Si6925DQ G1 4 Top View 8 D2 7 S2 6 S2 5 G2 D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 20 "12 "3.4 "2.7 "30 1.25 1 0.64 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RthJA Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70631 S-49455—Rev. A, 17-Dec-96 Limit 125 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 1 page

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PDF SI6925DQ Data sheet ( Hoja de datos )