(PDF) SI6967DQ Datasheet - Dual P-Channel 1.8-V (G-S) MOSFET

Número de pieza	SI6967DQ
Descripción	Dual P-Channel 1.8-V (G-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) 0.030 @ VGS = –4.5 V 0.045 @ VGS = –2.5 V 0.070 @ VGS = –1.8 V ID (A) "5.0 "4.0 "3.0 TSSOP-8 D1 1 D S1 2 S1 3 Si6967DQ G1 4 Top View 8 D2 7 S2 6 S2 5 G2 S1 G1 S2 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS –8 "8 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg "5.0 "4.0 "30 –1.25 1.1 0.72 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta t v 10 sec Steady State RthJA Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70811 S-59525—Rev. C, 12-Oct-98 Typical 115 Maximum 110 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 1 page

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