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Datasheet RFM4N35 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RFM4N35 | 4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs RFM4N35, RFM4N40, RFP4N35, RFP4N40
Semiconductor
Data Sheet
October 1998
File Number 1491.3
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs
Features
• 4A, 350V and 400V • rDS(ON) = 2.000Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Board | Intersil Corporation | mosfet |
RFM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RFM-07088 | One Chip FM Receiver
MODEL: RFM-07088 One Chip FM Receiver
The RFM-07088 is integrated circuits for use in mono portable and pocket radios. The module contains phase lock loop system. Onbroad build in auto scan and reset key. The model use minimum component and small size which easy for your applic RF receiver | | |
2 | RFM01 | ISM Band FSK Receiver Module
RFM01
Datasheet REV1.2
ISM BAND FSK RECEIVER MODULE RFM01
(the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF01 data sheets)
RFM01
General Introduction
RFM01 is a low Hope RF receiver | | |
3 | RFM01 | Universal ISM Band FSK Receiver RFM01 Universal ISM Band FSK Receiver
DESCRIPTION
Hoperf’ RFM01 is a single module, low power, multi-channel FSK receiver designed for use in applications requiring FCC or ETSI conformance for unlicensed use in the 315, 433, 868, and 915 MHz bands. Used in conjunction with RFM02, Hoperf’ FSK tra HOPERF receiver | | |
4 | RFM02 | Universal ISM Band FSK Transmitter RFM02
RFM02 Universal ISM Band FSK Transmitter
RFM02
DESCRIPTION
Hope’s RFM02 is a single chip, low power, multi-channel FSK transmitter designed for use in applications requiring FCC or ETSI conformance for unlicensed use in the 433, 868, and 915 MHz bands. Used in conjunction with RF01, Hope’ HOPERF data | | |
5 | RFM10N12 | (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State transistor | | |
6 | RFM10N12 | 10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS New Jersey Semiconductor mosfet | | |
7 | RFM10N15 | (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State transistor | |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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