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PDF BTS6163D Data sheet ( Hoja de datos )

Número de pieza BTS6163D
Descripción Smart Highside Power Switch
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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No Preview Available ! BTS6163D Hoja de datos, Descripción, Manual

PROFET® BTS 6163 D
Smart Highside Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Short circuit protection with latch
Current limitation
Overload protection
Thermal shutdown with restart
Overvoltage protection (including load dump)
Loss of ground protection
Loss of Vbb protection (with external diode for
charged inductive loads)
Very low standby current
Fast demagnetization of inductive loads
Electrostatic discharge (ESD) protection
Optimized static electromagnetic compatibility
(EMC)
Green Product (RoHS compliant)
AEC qualified
Product Summary
Operating voltage
Vbb(on) 5.5 ... 62 V
On-state resistance
RON
20 m
Nominal current
IL(nom)
5.5 A
Load current (ISO)
IL(ISO)
17 A
Current limitation
IL12(SC)
70 A
Package
PG-TO252-5-11
(DPAK 5 pin; less than half the size as TO 220 SMD)
Diagnostic Function
Proportional load current sense (with defined fault signal in case of overload operation, overtemperature
shutdown and/or short circuit shutdown)
Application
Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
3 & Tab
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
R bb
+ Vbb
Voltage
sensor
2 IN
ESD
Logic
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
OUT 1, 5
IL
Load
I IN Temperature
sensor
Data Sheet
VIN
VIS
Logic GND
I IS
IS
4
RIS
1 of 18
PROFET
Load GND
Rev. 1.0, 2007-07-23

1 page




BTS6163D pdf
PROFET® BTS 6163 D
Parameter and Conditions
at Tj= 25, Vbb = 24 V unless otherwise specified
Protection Functions 12)
Short circuit current limit (Tab to pin 1,5) 13)
Short circuit current limit at VON = 6V14)
Short circuit current limit at VON = 12V 14)
Short circuit current limit at VON = 18V 14)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Short circuit current limit at VON = 24V
tm=170µs
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Short circuit current limit at VON = 30V
tm=170µs
Short circuit current limit at VON = 45V 14)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Short circuit shutdown delay after input current
positive slope, VON > VON(SC), Tj = -40...+150°C
min. value valid only if input "off-signal" time exceeds 30 µs
Short circuit shutdown delay during on condition13)
VON > VON(SC)
Output clamp (inductive load switch off) 15)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
Thermal overload trip temperature
Thermal hysteresis
Symbol
IL6(SC)
IL12(SC)
IL18(SC)
IL24(SC)
IL30(SC)
IL45(SC)
VON(SC)
td(SC1)
td(SC2)
VON(CL)
Tjt
Tjt
Values
Unit
min. typ. max.
-- 90 110
-- 80
--
50 65
--
-- 80 100
-- 70
--
40 55
--
-- 55 80
-- 50
--
30 48
--
-- 45 60
-- 40
--
25 35
--
-- 30 50
-- 30
--
20 30
--
-- 22 35
-- 22
--
15 22
--
2.5 3.5 4.5
A
A
A
A
A
A
V
350 650 1200 µs
-- 2
63 67
150 175
-- 10
-- µs
-- V
-- °C
-- K
12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
13) Short circuit current limit for max. duration of td(SC1) , prior to shutdown, see also figures 3.x on page 13.
14) Not subject to production test, specified by design.
15) See also figure 2b on page 12.
Data Sheet
5 of 18
Rev. 1.0, 2007-07-23

5 Page





BTS6163D arduino
PROFET® BTS 6163 D
Short circuit detection
Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC)
(typ.650 µs).
Overload detection
Fault Condition: VON > 1 V typ.
+ Vbb
Inductive load switch-off energy
dissipation
E bb
E AS
V bb
V bb
IN PROFET OUT
i L(t)
Logic
unit
detection
circuit
VO N
OUT
{IS L
I IN RIS Z L RL
ELoad
EL
ER
Short circuit
Short circuit is a combination of primary and
secondary impedance’s and a resistance’s.
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
5uH
10mOhm
I IN
V bb
V bb
OUT
IN PROFET
IS
SC
L SC
RSC
ZL
Allowable combinations of minimum, secondary
resistance for full protection at given secondary
inductance and supply voltage for single short circuit
event:
[uH] L SC
15
Vbb : 32V 36V
40V
with an approximate solution for RL > 0 :
EAS= 2IR· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 24 V, RL = 0
1000
L [m H ]
100
10
10 48V 1
5
0
0
RSC
100 200 300 [mOhm]
0 ,1
0 ,0 1
1
10 I_L [A] 100
Data Sheet
11 of 18
Rev. 1.0, 2007-07-23

11 Page







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