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Datasheet NE72218 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NE72218 | C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE72218
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
FEATURES
• High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length • Gate width • 4-pin super minimold package • Tape & reel packaging only available : Lg = 0.8 µm : Wg = 400 | NEC | amplifier |
2 | NE72218-T1 | C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE72218
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
FEATURES
• High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length • Gate width • 4-pin super minimold package • Tape & reel packaging only available : Lg = 0.8 µm : Wg = 400 | NEC | amplifier |
3 | NE72218-T2 | C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE72218
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
FEATURES
• High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length • Gate width • 4-pin super minimold package • Tape & reel packaging only available : Lg = 0.8 µm : Wg = 400 | NEC | amplifier |
NE7 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NE71-0.2 | GSM Repeater
Sichuan Institute of Piezoelectric and Acoustooptic Technology
l For GSM Repeater
Absolute Maximum Rating Rating CW RF power Dissipation DC Voltage between any 2 pins Operating Temperature Value +13dBm ¡À 30VDC -10 to +60¡æ
NE 71-0.2
71MHz SAW Filter
Electrical Characteri SIPAT data | | |
2 | NE713 | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71 NEC amplifier | | |
3 | NE71300 | LOW NOISE L TO K-BAND GaAs MESFET LOW NOISE L TO K-BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE
3
NE71300
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 1 NEC data | | |
4 | NE71300-L | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71 NEC amplifier | | |
5 | NE71300-M | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71 NEC amplifier | | |
6 | NE71300-N | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71 NEC amplifier | | |
7 | NE71383B | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71 NEC amplifier | |
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Número de pieza | Descripción | Fabricantes | |
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