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Datasheet 2N2369A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N2369A | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N2369 2N2369A TO-18
APPLICATIONS
2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.
ABSOLUTE M |  CDIL | transistor |
| 2 | 2N2369A | Switching Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N2369/D
Switching Transistors
NPN Silicon
COLLECTOR 3
2 BASE
2N2369 2N2369A*
*Motorola Preferred Device
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage Collector – Emitter Voltage Collector– |  Motorola Semiconductors | transistor |
| 3 | 2N2369A | HIGH-SPEED SATURATED SWITCH 2N2369A
HIGH-SPEED SATURATED SWITCH
DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIM |  STMicroelectronics | data |
| 4 | 2N2369A | NPN BIPOLAR TRANSISTOR TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emit |  Microsemi | transistor |
| 5 | 2N2369A | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |  Boca | transistor |
2N2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N20 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N20
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte  Inchange Semiconductor mosfet | | |
| 2 | 2N2000 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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 ETC transistor | | |
| 3 | 2N2001 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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ETC transistor | | |
| 4 | 2N2017 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A  Central Semiconductor transistor | | |
| 5 | 2N2017 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 6 | 2N2018 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 7 | 2N2019 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | |
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