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PDF 2SK3577 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3577 | |
| Descripción | Switching N-Channel Power MOS FET | |
| Fabricantes | NEC Electronics | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3577
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3577 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 63 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 65 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
RDS(on)3 = 91 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3577
Marking: XL
SC-96 (Mini Mold Thin Type)
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16+–00..016
3
12
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C) Note2
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
30
±12
±3.5
±14
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15938EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
1 page  
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
110
VGS = 2.5V
100 Pulsed
TA = 125°C
90
80 75°C
70 25°C
60 −25°C
50
40
30
0.01
0.1 1 10
ID - Drain Current - A
100
2SK3577
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
110
VGS = 4.0 V
100 Pulsed
90
80
TA = 125°C
70
75°C
60
25°C
50
−25°C
40
30
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
110
VGS = 4.5 V
100 Pulsed
90
80
TA = 125°C
70
75°C
60
25°C
50
−25°C
40
30
0.01
0.1 1 10
ID - Drain Current - A
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
100
SWITCHING CHARACTERISTICS
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
tr
tf
td(off)
td(on)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
1 VGS = 0 V
0.1
10
0.1
1
ID - Drain Current - A
0.01
10 0.4
Data Sheet D15938EJ1V0DS
0.6 0.8 1 1.2
VSD - Source to Drain Voltage - V
1.4
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3577.PDF ] | |
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