Datasheet SGU20N40L Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	SGU20N40L	High input impedance SGR20N40L / SGU20N40L August 2001 IGBT SGR20N40L / SGU20N40L General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise im	Fairchild Semiconductor	data

SGU Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	SGU04N60	Fast IGBT in NPT-technology SGP04N60, SGD04N60, Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter dis	Infineon Technologies AG	igbt
2	SGU06N60	Fast IGBT in NPT-technology SGP06N60, SGD06N60, Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - ver	Infineon Technologies	igbt
3	SGU15N40	General Description SGR15N40L / SGU15N40L IGBT SGR15N40L / SGU15N40L General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These	Fairchild Semiconductor	data
4	SGU15N40L	General Description SGR15N40L / SGU15N40L IGBT SGR15N40L / SGU15N40L General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These	Fairchild Semiconductor	data
5	SGU20N40L	High input impedance SGR20N40L / SGU20N40L August 2001 IGBT SGR20N40L / SGU20N40L General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise im	Fairchild Semiconductor	data
6	SGU2N60UF	Ultra-Fast IGBT SGU2N60UF IGBT SGU2N60UF Ultra-Fast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a requi	Fairchild Semiconductor	igbt
7	SGU2N60UFD	Ultra-Fast IGBT SGU2N60UFD IGBT SGU2N60UFD Ultra-Fast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a r	Fairchild Semiconductor	igbt
8	SGU6N60UF	Ultra-Fast IGBT SGU6N60UF IGBT SGU6N60UF Ultra-Fast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a requi	Fairchild Semiconductor	igbt

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Número de pieza	Descripción	Fabricantes	PDF
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