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Datasheet MTP2955V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MTP2955V | P-Channel Enhancement Mode Field Effect Transistor MTP2955V
May 1999 DISTRIBUTION GROUP*
MTP2955V
P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster |  Fairchild Semiconductor | transistor |
| 2 | MTP2955V | TMOS POWER FET 12 AMPERES 60 VOLTS MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP2955V/D
TMOS Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell de |  Motorola Semiconductors | data |
| 3 | MTP2955V | Power MOSFET, Transistor MTP2955V
Preferred Device
Power MOSFET 12 Amps, 60 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devi |  ON Semiconductor | mosfet |
| 4 | MTP2955VG | Power MOSFET, Transistor MTP2955V
Preferred Device
Power MOSFET 12 Amps, 60 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devi | ON Semiconductor | mosfet |
MTP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MTP1013C3 | -20V P-CHANNEL Enhancement Mode MOSFET CYStech Electronics Corp.
-20V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2012.10.05 Page No. : 1/ 8
MTP1013C3
Features
BVDSS ID RDSON@VGS=-4.5V, ID=-500mA RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-150mA
-20V -500mA 0.63Ω(typ) 1.1Ω(typ) 1  CYStech Electronics mosfet | | |
| 2 | MTP10N05 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs w
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Motorola Semiconductors mosfet | | |
| 3 | MTP10N06 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs w
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Motorola Semiconductors mosfet | | |
| 4 | MTP10N08 | (MTP10N08 / MTP10N10) N-Channel Power MOSFETs ( )
Fairchild Semiconductor mosfet | | |
| 5 | MTP10N08 | (MTP10N08 / MTP10N10) Power Field Effect Transistor ( )
 Motorola Semiconductor transistor | | |
| 6 | MTP10N08 | Trans MOSFET N-CH 80V 10A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor mosfet | | |
| 7 | MTP10N08L | Trans MOSFET N-CH 80V 10A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor mosfet | |
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