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PDF 2SK3900 Data sheet ( Hoja de datos )

Número de pieza 2SK3900
Descripción SWITCHING N-CHANNEL POWER MOSFET
Fabricantes NEC 
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No Preview Available ! 2SK3900 Hoja de datos, Descripción, Manual

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3900
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3900 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3900-ZP
TO-263 (MP-25ZP)
FEATURES
Super low on-state resistance
RDS(on)1 = 8.0 mMAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 10 mMAX. (VGS = 4.5 V, ID = 41 A)
Low Ciss: Ciss = 3500 pF TYP.
Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±246
Total Power Dissipation (TC = 25°C)
PT1
104
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg 55 to +150
EAS 141
IAR 37.5
EAR 141
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 µH
3. RG = 25 , Tch(peak) 150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17175EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004

1 page




2SK3900 pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
16
12
VGS = 4.5 V
8 10 V
4
0
-75
ID = 41 A
Pulsed
-25 25 75 125
Tch - Channel Temperature - °C
175
1000
100
SWITCHING CHARACTERISTICS
VDD = 30 V
VGS = 10 V
RG = 0
td(off)
td(on)
tr
10
tf
1
0.1
1 10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10 0 V
1
0.1
Pulsed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3900
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
1000
C iss
C oss
100 C rss
10
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
VDD = 48 V
ID = 82 A
50 30 V
10
12 V
40 8
30
VGS
6
20 4
10 VDS
2
00
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Data Sheet D17175EJ1V0DS
5

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