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Datasheet BB505M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BB505M | Build in Biasing Circuit MOS FET IC w
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|  Renesas Technology | data |
BB5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BB501 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to  Hitachi amplifier | | |
| 2 | BB501 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to Hitachi amplifier | | |
| 3 | BB501C | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to Hitachi amplifier | | |
| 4 | BB501M | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-700C (Z) 4th. Edition Nov. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to Hitachi amplifier | | |
| 5 | BB502 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD Hitachi amplifier | | |
| 6 | BB502 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD Hitachi amplifier | | |
| 7 | BB502C | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD Hitachi amplifier | | |
| 8 | BB502M | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-809B(Z) 3rd. Edition Jun. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD Hitachi amplifier | | |
| 9 | BB503 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB503C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-812B(Z) 3rd. Edition Jul. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD Hitachi amplifier | |
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