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PDF 2SK3564 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3564 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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( DataSheet : www.DataSheet4U.com )
TENTATIVE
2SK3564
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3564
Switching Regulator Applications
unit
• Low drain-source ON resistance: RDS (ON) = 3.7 (typ.)
• High forward transfer admittance: |Yfs| = 2.6 S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
10±0.3
φ3.2±0.2
2.7±0.2
Maximum Ratings (Ta = 25°C)
1.1
1.1
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
Rating
900
900
±30
3
9
40
TBD
Unit
V
V
0.69±0.15
2.54±0.25
2.54±0.25
V 123
A
1. Gate
W 2. Drain
3. Source
mJ
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
IAR
EAR
Tch
3A
4.0 mJ
150 °C JEDEC
Storage temperature range
Tstg
-55~150
°C
JEITA
Thermal Characteristics
TOSHIBA
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = TBD mH, IAR = 3.0 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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2003-02-14
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK3564.PDF ] | |
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