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Datasheet IDT72V83 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IDT72V83 | 3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO 3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9, DUAL 1,024 x 9 DUAL 2,048 x 9, DUAL 4,096 X 9 DUAL 8,192 X 9
IDT72V81 IDT72V82 IDT72V83 IDT72V84 IDT72V85
FEATURES:
• The IDT72V81 is equivalent to two IDT72V01 - 512 x 9 FIFOs • The IDT72V82 is equivalent to two IDT72V02 - 1,024 x 9 FIFOs • | Integrated Device Technology | cmos |
2 | IDT72V831 | 3.3 VOLT DUAL CMOS SyncFIFO 3.3 VOLT DUAL CMOS SyncFIFO™ DUAL 256 X 9, DUAL 512 X 9, DUAL 1,024 X 9, DUAL 2,048 X 9, DUAL 4,096 X 9 , DUAL 8,192 X 9
IDT72V801 IDT72V811 IDT72V821 IDT72V831 IDT72V841 IDT72V851
.EATURES:
• • • • • • • • • • • • • • •
The IDT72V801 is equivalent to two IDT72V201 | Integrated Device Tech | cmos |
3 | IDT72V835 | 3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18/ DUAL 512 x 18/ DUAL 1/024 x 18/ DUAL 2/048 x 18 3.3 VOLT CMOS DUAL SyncFIFO™ DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 and DUAL 4,096 x 18
IDT72V805 IDT72V815 IDT72V825 IDT72V835 IDT72V845
FEATURES:
• • • • • • •
• • • •
The IDT72V805 is equivalent to two IDT72V205 256 x 18 FIFOs The IDT72V815 is e | Integrated Device Tech | cmos |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap Infineon Technologies AG diode | | |
4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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Número de pieza | Descripción | Fabricantes | |
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