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PDF SI4442DY Data sheet ( Hoja de datos )
| Número de pieza | SI4442DY | |
| Descripción | N-Channel 30-V MOSFET | |
| Fabricantes | Vishay Intertechnology | |
| Logotipo |  |
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N-Channel 30-V (D-S) MOSFET
Si4442DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V
0.005 @ VGS = 4.5 V
0.0075 @ VGS = 2.5 V
ID (A)
22
19
17
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
D
G
Ordering Information:
Si4442DY
Si4442DY-T1 (with Tape and Reel) DataSheet4U.com
Si4442DY—E3 (Lead Free)
Si4442DY-T1—E3 (Lead Free with Tape and Reel)
S
N-Channel MOSFET
DataShee
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"12
22 15
17 11
60
2.9 1.3
3.5 1.6
2.2 1
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
DataSheet4aU. .cSourmface Mounted on 1” x 1” FR4 Board.
Document Number: 71358
S-40843—Rev. C, 03-May-04
t v 10 sec
Steady State
Steady State
DataSheet4 U .com
Symbol
RthJA
RthJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
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| PDF Descargar | [ Datasheet SI4442DY.PDF ] | |
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