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Datasheet MTE8080P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MTE8080P | 5mm Metal Can IR Emitter
5mm Metal Can IR Emitter
MTE8080P
Features High Output Power Parallel Rays High Reliability in Demanding Environments
Applications Optical Switches Linear Rotary Encoder
Maximum Ratings (Ta=25 C)
Characteristic Forward Current Pulsed Forward Current Reverse Voltage Power Diss | Marktech Corporate | data |
2 | MTE8080PT | Metal Can Pill IR Emitter
Metal Can Pill IR Emitter
MTE8080PT
Features High Output Power Narrow Beam Angle Compact High Reliability in Demanding Environments
Applications Optical Switches Edge Sensing
Maximum Ratings (Ta=25 C)
Characteristic Forward Current Pulsed Forward Current Reverse Voltage Power | Marktech Corporate | data |
MTE Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MTE010N10E3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE010N10E3 BVDSS ID
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
100V 70A 9.6mΩ 10.1mΩ
Features
• Low Gate Charge • Simple Drive Requirem Cystech Electonics mosfet | | |
2 | MTE010N10F3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C944F3 Issued Date : 2014.06.09 Revised Date : 2015.09.04 Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 BVDSS ID@ TC=25°C, VGS=10V (silicon limit)
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
Features
• Low Gate Charge • S Cystech Electonics mosfet | | |
3 | MTE010N10FP | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE010N10FP BVDSS ID @ VGS=10V
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V 35A 9.9mΩ 10.5mΩ
Features
• Low On Resistance • Simple D Cystech Electonics mosfet | | |
4 | MTE011N10RE3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE011N10RE3
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant Cystech Electonics mosfet | | |
5 | MTE011N10RFP | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE011N10RFP
BVDSS
Features
ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
Low On Resistance
RDS(ON)@VGS=10V, ID=11A
Simple Drive Require Cystech Electonics mosfet | | |
6 | MTE011N10RH8 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE011N10RH8 BVDSS
100V
ID@VGS=10V, TC=25°C
45A
ID@VGS=10V, TA=25°C
15A
RDSON(TYP) VGS=10V, ID=11.5A 9.5mΩ
Features
• Single Drive Requirement � Cystech Electonics mosfet | | |
7 | MTE011N10RJ3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE011N10RJ3
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead p Cystech Electonics mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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