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Número de pieza | UPA1870 | |
Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
Fabricantes | NEC | |
Logotipo | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1870
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µPA1870 is a switching device which can be
driven directly by a 2.5-V power source.
85
The µPA1870 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 20.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
14
3°
+5°
–3°
0.1±0.05
RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 27.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
3.15 ±0.15
• Built-in G-S protection diode against ESD
3.0 ±0.1
DataSheet4U.com
6.4 ±0.2
4.4 ±0.1
0.25
0.5
0.6
+0.15
–0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
µ PA1870GR-9JG
PACKAGE
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
20
Gate to Source Voltage
VGSS
±12
Drain Current (DC)
Drain Current (pulse) Note 1
Total Power Dissipation Note 2
ID(DC)
ID(pulse)
PT
±6.0
±80
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
DataShee
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 50 cm2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
DataSheet4U.com
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14886EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
© 2000
1 page www.DataSheet4U.com
µPA1870
et4U.com
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
10
0.1
VDD = 10 V
VGS(on) = 4 V
RG = 10 Ω
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 VGS = 0V
10
1
0.1
0.01
0.4
0.6 0.8
1 1.2
VF(S-D) - Body Diode Forward Voltage - V
DYNAMIC INPUT CHARACTERISTICS
6
ID = 6.0 A
5
4
VDD = 16 V
3 10 V
2
1
DataSheet4U.com
0
0 1 2 3 4 5 6 7 8 9 10
Qg - Gate Charge - nC
5
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1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 62.5˚C/W
10
1
0.1
1m
10 m
Single Pulse
Mounted on Ceramic Board of
50 cm2 x 1.1 mm
PD(FET1) : PD(FET2) = 1 : 1
100 m
1
10
PW - Pulse Width - s
100 1000
Data Sheet G14886EJ2V0DS
DataShee
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet UPA1870.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPA1870 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
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UPA1871 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
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