PDF SI1499DH Data sheet ( Hoja de datos )

Número de pieza	SI1499DH
Descripción	P-Channel MOSFET
Fabricantes	Vishay Siliconix
Logotipo
Hay una vista previa y un enlace de descarga de SI1499DH (archivo pdf) en la parte inferior de esta página. Total 6 Páginas
No Preview Available ! www.DataSheet4U.com New Product P-Channel 1.2-V (G-S) MOSFET Si1499DH Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.078 at VGS = - 4.5 V 0.095 at VGS = - 2.5 V - 8 0.115 at VGS = - 1.8 V 0.153 at VGS = - 1.5 V 0.424 at VGS = - 1.2 V ID (A)c - 1.6 - 1.6 - 1.6 - 1.6 - 1.6b Qg (Typ) 10.5 nC SOT-363 SC-70 (6-LEADS) D1 D2 G3 6D 5D 4S Marking Code BI XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) FEATURES • TrenchFET® Power MOSFET • Ultra-Low On-Resistance • RoHS Compliant APPLICATIONS • Load Switch for Portable Devices - Guaranteed Operation at VGS = 1.2 V Critical for Optimized Design and Longer Battery Life S RoHS COMPLIANT G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) IDM Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)c, d Limit -8 ±5 -1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c - 6.5c - 1.6c - 1.3a, b 2.78 1.78 2.5a, b 1a, b - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d t ≤ 5 sec Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 sec. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 73338 S-61963-Rev. C, 09-Oct-06 Symbol RthJA RthJF Typical 60 34 Maximum 80 45 Unit °C/W www.vishay.com 1 1 page TYPICAL CHARACTERISTICS 25 °C, unless noted 6 Si1499DH Vishay Siliconix 5 4 3 Package Limited 2 1 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating* TYPICAL CHARACTERISTICS 25 °C, unless noted 2 *The power dissipation PD is based on TJ(max) = 175 °C, using junc- tion-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 2 Notes: PDM Single Pulse t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 100 600 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.0.202 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73338. Document Number: 73338 S-61963-Rev. C, 09-Oct-06 www.vishay.com 5 5 Page

Páginas	Total 6 Páginas
PDF Descargar	[ Datasheet SI1499DH.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
SI1499DH	P-Channel MOSFET	Vishay Siliconix

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar