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CPH6320 PDF даташит

Спецификация CPH6320 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «General-Purpose Switching Device Applications».

Детали детали

Номер произв CPH6320
Описание General-Purpose Switching Device Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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CPH6320 Даташит, Описание, Даташиты
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Ordering number : ENN8208
CPH6320
CPH6320
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm2!0.8mm)
Ratings
--12
±8
--3.5
--14
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : JW
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0
VDS=--12V, VGS=0
VGS=±6.4V, VDS=0
VDS=--6V, ID=--1mA
VDS=--6V, ID=--1.7A
ID=--1.7A, VGS=--4.5V
ID=--0.8A, VGS=--2.5V
ID=--0.4A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--12
--0.3
3.3
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.0 V
4.7 S
75 98 m
110 155 m
150 225 m
450 pF
100 pF
85 pF
15 ns
90 ns
62 ns
50 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12805PE TS IM TA-100050 No.8208-1/4









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CPH6320 Даташит, Описание, Даташиты
CPH6320
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--6V, VGS=--4.5V, ID=--3.5A
VDS=--6V, VGS=--4.5V, ID=--3.5A
VDS=--6V, VGS=--4.5V, ID=--3.5A
IS=--3.5A, VGS=0
Ratings
min typ max
Unit
6.5 nC
0.8 nC
2.0 nC
--0.9 --1.5 V
Package Dimensions
unit : mm
2151A
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10µs
D.C.1%
G
VDD= --6V
ID= --1.7A
RL=3.53
D VOUT
CPH6320
P.G 50S
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
250
200
ID -- VDS
--2.5V
--1.8V
--1.5V
VGS= --1.0V
--0.1 --0.2 --0.3 --0.4 --0.5
Drain-to-Source Voltage, VDS -- V IT04325
RDS(on) -- VGS
Ta=25°C
150
ID= --0.8A --1.7A
100
50
0
0 --1 --2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS -- V IT09181
--3.0
VDS= --6V
--2.5
ID -- VGS
--2.0
--1.5
--1.0
--0.5
0
--0.2
300
--0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT04326
250
200
150
ID=
ID=
--0.4A,
--0.8A,
VGS=
VGS=
--1.8V
--2.5V
100 ID= --1.7A, VGS= --4.5V
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09182
No.8208-2/4









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CPH6320 Даташит, Описание, Даташиты
CPH6320
yfs-- ID
3
VDS= --6V
2
10
7 25°C
5
3
Ta= --25°C
75°C
2
1.0
7
5
--0.1
23
5 7 --1.0
23
57
Drain Current, ID -- A
IT04329
5
VDD= --6V
SW Time -- ID
3 VGS= --4.5V
2
tr
100
td(off)
7
5 tf
3
2
td(on)
10
--0.1
23
5 7 --1.0
23
57
Drain Current, ID -- A
IT04331
VGS -- Qg
--4.5
VDS= --6V
--4.0 ID= --3.5A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
2.0
1234567
Total Gate Charge, Qg -- nC
IT09174
PD -- Ta
IF -- VSD
--10 VGS=0
7
5
3
2
--1.0
7
5
3
2
--0.1
--0.4
1000
7
5
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V IT04330
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
Coss
100
7 Crss
5
3
0 --2 --4 --6 --8 --10 --12
Drain-to-Source Voltage, VDS -- V IT04332
ASO
3
2 IDP= --14A
<10µs
--10
7
5 ID= --3.5A
3
2
--1.0
7
5
1ms100µs
DC op1e0r0a1tmi0osmns
3 Operation in this
2 area is limited by RDS(on).
--0.1
7
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (1200mm2!0.8mm)
--0.1
2 3 5 7 --1.0
2 3 5 7 --10
Drain-to-Source Voltage, VDS -- V
23
IT09175
1.6
1.5
1.0
0.5
Mounted on a ceramic board (1200mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09176
No.8208-3/4










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