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CPH6324 PDF даташит

Спецификация CPH6324 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «ULTRAHIGH-SPEED SWITCHING APPLICATIONS».

Детали детали

Номер произв CPH6324
Описание ULTRAHIGH-SPEED SWITCHING APPLICATIONS
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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CPH6324 Даташит, Описание, Даташиты
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Ordering number : ENN0000
CPH6324
P-Channel Silicon MOSFET
CPH6324
Preliminary
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2151A
[CPH6324]
2.9 0.15
6 54
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm20.8mm)
Ratings
--60
±20
--2
--8
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : YA
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--1A, VGS=--4V
min
--60
--1.2
1.6
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
2.4 S
275 360 m
400 560 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0402 TS IM AKIBA No.0000-1/4









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CPH6324 Даташит, Описание, Даташиты
CPH6324
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
IS=--2A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --1A
RL=30
D VOUT
P.G 50
S CPH6324
Ratings
min typ max
Unit
365 pF
39 pF
30 pF
9 ns
24 ns
38 ns
38 ns
9 nC
1.7 nC
1.7 nC
--0.84
--1.2 V
ID -- VDS
--4.0
--5.0V
--3.5
--3.0
--2.5 --3.5V
--2.0
--1.5
VGS= --3.0V
--1.0
--0.5
0
0
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Drain-to-Source Voltage, VDS -- V IT05810
RDS(on) -- VGS
Ta=25°C
ID= --1A
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT05846
--4.0
VDS= --10V
--3.5
ID -- VGS
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT05845
RDS(on) -- Ta
700
650
600
550
500
450
400
350
300
I
D=
--1A,
I D=
V GS= --4V
--1A, VGS=
--10V
250
200
150
100
--60 --40 --20 0
20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C
IT05847
No.0000-2/4









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CPH6324 Даташит, Описание, Даташиты
CPH6324
yfs-- ID
10
--10
7
VDS= --10V
7
5
53
2
3
2
1.0
Ta=
--25°C
75°C
7
5
25°C
3
--1.0
7
5
3
2
--0.1
7
5
23
2
IF -- VSD
VGS=0
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
3
2
VDD= --30V
VGS= --10V
23
5 7 --10
IT05848
100
7
5 tf td(off)
3
2 tr
10 td(on)
7
5
3
2
--0.1
23
5 7 --1.0
Drain Current, ID -- A
VGS -- Qg
--10
VDS= --30V
--9 ID= --2A
--8
2
35
IT05816
--7
--6
--5
--4
--3
--2
--1
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT05818
PD -- Ta
2.0
--0.01
--0.2
1000
7
5
3
2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V IT05849
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
Coss
3 Crss
2
10
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT05817
ASO
2
--10 IDP= --8A
7
5
3 ID= --2A
2
--1.0
7
5
<10µs
100m1s0ms1m1s00µs
3
2
Operation in this area
--0.1
7
is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board(1200mm20.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100
Drain-to-Source Voltage, VDS -- V IT05831
1.5
1.0
0.5
Mounted on a ceramic board(1200mm 20.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05832
No.0000-3/4










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