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CPH6328 PDF даташит

Спецификация CPH6328 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «ULTRAHIGH-SPEED SWITCHING APPLICATIONS».

Детали детали

Номер произв CPH6328
Описание ULTRAHIGH-SPEED SWITCHING APPLICATIONS
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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CPH6328 Даташит, Описание, Даташиты
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5Ordering number : ENN7530
CPH6328
P-Channel Silicon MOSFET
CPH6328
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Package Dimensions
unit : mm
2151A
[CPH6328]
2.9 0.15
6 54
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--100
±20
--1.6
--6.4
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : YE
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--100V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--10V
ID=--0.8A, VGS=--4V
min
--100
--1.2
1.5
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
2.3 S
410 530 m
530 730 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100351 No.7530-1/4









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CPH6328 Даташит, Описание, Даташиты
CPH6328
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--1.6A
VDS=--50V, VGS=--10V, ID=--1.6A
VDS=--50V, VGS=--10V, ID=--1.6A
IS=--1.6A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --50V
ID= --0.8A
RL=62.5
D VOUT
P.G 50
S CPH6328
Ratings
min typ max
Unit
535 pF
43 pF
31 pF
9 ns
5 ns
62 ns
34 ns
11 nC
2.6 nC
2 nC
--0.83
--1.2 V
ID -- VDS
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0 VGS= --3.0V
--0.8
--0.6
--0.4
--0.2
0
0
800
750
700
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS -- V IT06006
RDS(on) -- VGS
Ta=25°C
ID= --0.8A
650
600
550
500
450
400
350
300
0
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT06008
ID -- VGS
--3.0
VDS= --10V
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 --1 --2 --3 --4 --5
Gate-to-Source Voltage, VGS -- V IT06007
RDS(on) -- Ta
800
750
700
650
600
550
500
450
I
D=
I
-D-0=.8--A0,.8VAG, VS=G--S4=V--10V
400
350
300
250
200
--60 --40 --20 0
20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C
IT06009
No.7530-2/4









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CPH6328 Даташит, Описание, Даташиты
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.01 2 3
100
7
5
3
2
CPH6328
yfs-- ID
VDS= --10V
--10
7
5
3
2
Ta=--25°7C5°C
25°C
5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
td(off)
23 5
IT06010
tf
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.3
1000
7
5
3
2
IF -- VSD
VGS=0
--0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Diode Forward Voltage, VSD -- V IT06011
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
10 td(on)
7
5 tr
3
2
1.0
--0.1
2
--10
VDS= --50V
--9 ID= --1.6A
3 5 7 --1.0
Drain Current, ID -- A
VGS -- Qg
VDD= --50V
VGS= --10V
23
5
IT06012
--8
--7
--6
--5
--4
--3
--2
--1
0
0 2 4 6 8 10 12
Total Gate Charge, Qg -- nC
IT06014
PD -- Ta
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06016
100
7
5 Coss
3 Crss
2
10
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT06013
ASO
2
--10
7
IDP= --6.4A
10µs
5
3
2 ID= --1.6A
1m1s00µs
--1.0
7
5
3
2
--0.1 Operation in this
DC
100m1s0ms
operation
7
5
area is limited by RDS(on).
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board(900mm2!0.8mm)
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100
2
Drain-to-Source Voltage, VDS -- V IT06015
No.7530-3/4










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