DataSheet26.com

FDMS8660S PDF даташит

Спецификация FDMS8660S изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel PowerTrench SyncFET».

Детали детали

Номер произв FDMS8660S
Описание N-Channel PowerTrench SyncFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

8 Pages
scroll

No Preview Available !

FDMS8660S Даташит, Описание, Даташиты
www.DataSheet4U.com
August 2006
FDMS8660S
N-Channel PowerTrench® SyncFETTM
30V, 40A, 2.4m
Features
General Description
tm
„ Max rDS(on) = 2.4mat VGS = 10V, ID = 25A
„ Max rDS(on) = 3.5mat VGS = 4.5V, ID = 21A
„ Advanced Package and Silicon combination for low RDS(ON)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
The FDMS8660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest RDS(ON) while maintaining excellent switching
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
Application
„ RoHS Compliant
Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
SSSG
Pin 1
DDDD
MLP5x6 (Bottom view)
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
Device Marking
FDMS8660S
Device
FDMS8660S
Package
MLP5X6
Reel Size
13’’
Ratings
30
±20
40
147
25
200
83
2.5
-55 to +150
Units
V
V
A
W
°C
1.5
50 °C/W
Tape Width
12mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMS8660S Rev.C (W)
1
www.fairchildsemi.com









No Preview Available !

FDMS8660S Даташит, Описание, Даташиты
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1mA, VGS = 0V
ID = 1mA, referenced to 25°C
VDS = 24V, VGS = 0V
VGS = ±20V, VGS = 0V
30
35
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1mA
ID = 1mA, referenced to 25°C
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 21A
VGS = 10V, ID = 25A ,TJ = 125°C
VDS = 10V, ID = 25A
1
1.5
-6
1.9
2.6
2.9
123
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
4342
1213
425
1.0
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(4.5V)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15V, ID = 1A
VGS = 10V, RGEN = 6
VGS = 0V to 10V
VGS = 0V to 4.5V
VDS = 15V, ID = 25A
VGS = 10V
17
12
76
50
81
44
11
16
Max Units
500
±100
V
mV/°C
µA
nA
2V
mV/°C
2.4
3.5 m
3.9
S
pF
pF
pF
31 ns
22 ns
122 ns
80 ns
113 nC
nC
nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.2A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 25A, di/dt = 300A/µs
0.37 0.7
35
98
V
ns
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMS8660S Rev.C (W)
2
www.fairchildsemi.com









No Preview Available !

FDMS8660S Даташит, Описание, Даташиты
Typical Characteristics TJ = 25°C unless otherwise noted
120
PULSE DURATION = 300µs
100
DUTY CYCLE = 2%MAX
VGS = 10V
80 VGS = 6.0V
VGS = 4.5V
60 VGS = 3.5V
VGS = 3.0V
40
20
0
0.0 0.4 0.8 1.2 1.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.0
4.0
VGS = 3.0V
3.5
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
3.0
2.5 VGS = 3.5V
2.0
1.5
VGS = 10V
VGS = 6V
VGS = 4.5V
1.0
0.5
0
20 40 60 80
ID, DRAIN CURRENT(A)
100 120
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 25A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
8
7
ID = 25A
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
6
5
4 TJ = 125oC
3
2 TJ = 25oC
1
23456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
90
80
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
70
60 TJ = 125oC
50
40 TJ = 25oC
30
20
10 TJ = -55oC
0
1.0 1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
VGS = 0V
1 TJ = 125oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.7
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS8660S Rev.C (W) 3 www.fairchildsemi.com










Скачать PDF:

[ FDMS8660S.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
FDMS8660ASN-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor
FDMS8660SN-Channel PowerTrench SyncFETFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск