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IRF2807ZSPBF PDF даташит

Спецификация IRF2807ZSPBF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «AUTOMOTIVE MOSFET».

Детали детали

Номер произв IRF2807ZSPBF
Описание AUTOMOTIVE MOSFET
Производители International Rectifier
логотип International Rectifier логотип 

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IRF2807ZSPBF Даташит, Описание, Даташиты
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PD - 95488
IRF2807ZPbF
AUTOMOTIVE MOSFET IRF2807ZSPbF
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
IRF2807ZLPbF
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 9.4m
G
ID = 75A
S
TO-220AB
IRF2807Z
D2Pak
IRF2807ZS
TO-262
IRF2807ZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
89
63
75
350
170
1.1
± 20
160
200
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
06/30/04









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IRF2807ZSPBF Даташит, Описание, Даташиты
IRF2807Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 ––– –––
––– 0.073 –––
––– 7.5 9.4
2.0 ––– 4.0
V VGS = 0V, ID = 250µA
fV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 53A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
67 ––– ––– S VDS = 25V, ID = 53A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 75V, VGS = 0V
––– ––– 250
VDS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 71 110 nC ID = 53A
Qgs Gate-to-Source Charge
––– 19 29
VDS = 60V
fQgd
Gate-to-Drain ("Miller") Charge
––– 28 42
VGS = 10V
td(on)
Turn-On Delay Time
––– 18 ––– ns VDD = 38V
tr Rise Time
––– 79 –––
ID = 53A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 40 –––
––– 45 –––
fRG = 6.2
VGS = 10V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS Internal Source Inductance
––– 7.5 –––
6mm (0.25in.)
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 3270 –––
––– 420 –––
––– 240 –––
––– 1590 –––
––– 280 –––
––– 440 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 89
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 350
A showing the
integral reverse
G
––– ––– 1.3
––– 46 69
––– 80 120
fp-n junction diode.
S
V TJ = 25°C, IS = 53A, VGS = 0V
fns TJ = 25°C, IF = 53A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH,
RG = 25, IAS = 53A, VGS =10V. Part not
recommended for use above this value.
ƒ ISD 53A, di/dt 420A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2 www.irf.com









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IRF2807ZSPBF Даташит, Описание, Даташиты
IRF2807Z/S/LPbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
0.01
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10 4.5V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
1
0.1
4
TJ = 25°C
VDS = 25V
20µs PULSE WIDTH
6 8 10
VGS, Gate-to-Source Voltage (V)
12
Fig 3. Typical Transfer Characteristics
www.irf.com
150
125
TJ = 25°C
100
75
50 TJ = 175°C
25
0
0 25 50 75 100 125 150
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
3










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Номер в каталогеОписаниеПроизводители
IRF2807ZSPBFAUTOMOTIVE MOSFETInternational Rectifier
International Rectifier

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