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MA2YD21 PDF даташит

Спецификация MA2YD21 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Silicon epitaxial planar type».

Детали детали

Номер произв MA2YD21
Описание Silicon epitaxial planar type
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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MA2YD21 Даташит, Описание, Даташиты
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Schottky Barrier Diodes (SBD)
MA2YD21
Silicon epitaxial planar type
For high frequency rectification
Features
Forward current (Average) IF(AV) = 1 A rectification is possible
Low forward voltage: VF < 0.4 V
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average) *1
Non-repetitive peak forward
surge current *2
VR
VRRM
IF(AV)
IFSM
15
15
1.0
3
V
V
A
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg 55 to +125 °C
Note) *1: Mounted on an alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1.6±0.1
1
Unit: mm
0.80±0.05
0 to 0.1
2
0.55±0.1
0.45±0.1
0.16+–00..016
1: Anode
2: Cathode
Marking Symbol: 2X
Mini2-F1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF IF = 1 A
IR VR = 6 V
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
0.4
1.5
180
12
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: April 2004
SKH00033BED
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MA2YD21 Даташит, Описание, Даташиты
MA2YD21
IF VF
104
103 Ta = 125°C
102
75°C
25°C
10 20°C
1
101
102
103
0
0.2 0.4 0.6
Forward voltage VF (V)
IR VR
104
103
102 Ta = 125°C
10 75°C
1 25°C
101
102
0
10
Reverse voltage VR (V)
20
Ct VR
300
Ta = 25°C
200
100
0
0 10 20
Reverse voltage VR (V)
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MA2YD21 Даташит, Описание, Даташиты
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP










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Номер в каталогеОписаниеПроизводители
MA2YD21Silicon epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor
MA2YD23Silicon epitaxial planar typePanasonic
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