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MA6J784 PDF даташит

Спецификация MA6J784 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Silicon epitaxial planar type».

Детали детали

Номер произв MA6J784
Описание Silicon epitaxial planar type
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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MA6J784 Даташит, Описание, Даташиты
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Schottky Barrier Diodes (SBD)
MA6J784
Silicon epitaxial planar type
For super high speed switching
For small current rectification
Features
IF(AV) = 100 mA rectification is possible
Optimum for high frequency rectification because of its short
reverse recovery time (trr)
Low forward voltage VF and good rectification efficiency
2.0±0.1
(0.65)(0.65)
654
Unit: mm
0.7±0.1
1 23
0.2±0.05
0.16+–00..0160
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Repetitive peak reverse voltage
Average forward current *2
Peak forward current *2
Non-repetitive peak forward
surge current *1, 2
VR
VRRM
IF(AV)
IFM
IFSM
30
30
100
300
1
V
V
mA
mA
A
Junction temperature
Storage temperature
Tj 125
Tstg 55 to +125
°C
°C
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*2: Value of each diode in double diodes used.
Electrical Characteristics Ta = 25°C ± 3°C
1: Anode 1 4: Cathode 3
2: Anode 2 5: Cathode 2
3: Anode 3 6: Cathode 1
EIAJ: SC-88
SMini6-F1 Package
Marking Symbol: M8A
Internal Connection
654
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF IF = 100 mA
IR VR = 30 V
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 0.1 • IR , RL = 100
0.55
15
20
2.0
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 250 MHz
4. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 • IR
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: October 2003
SKH00133AED
1









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MA6J784 Даташит, Описание, Даташиты
M6J784
IF VF
103
102 75°C 25°C
10 Ta = 125°C
20°C
1
101
102
0
0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
IR VR
104
103
Ta = 125°C
102
75°C
10
25°C
1
101
0
5 10 15 20 25 30
Reverse voltage VR (V)
VF Ta
1.0
0.8
0.6
0.4 IF = 100 mA
0.2 10 mA
3 mA
0
40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR Ta
104
103
VR = 30 V
102 3 V
1V
10
1
101
40
0
40 80 120 160 200
Ambient temperature Ta (°C)
Ct VR
24
f = 1 MHz
Ta = 25°C
20
16
12
8
4
0
0 5 10 15 20 25 30
Reverse voltage VR (V)
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MA6J784 Даташит, Описание, Даташиты
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP










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Номер в каталогеОписаниеПроизводители
MA6J784Silicon epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor

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