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SCH2315 PDF даташит

Спецификация SCH2315 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «General-Purpose Switching Device Applications».

Детали детали

Номер произв SCH2315
Описание General-Purpose Switching Device Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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SCH2315 Даташит, Описание, Даташиты
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Ordering number : ENN8222
SCH2315
SCH2315
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Composite type with two MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Ratings
--12
±8
--0.9
--3.6
0.65
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : MQ
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=--1mA, VGS=0
VDS=--12V, VGS=0
VGS=±6.4V, VDS=0
VDS=--6V, ID=--100µA
VDS=--6V, ID=--500mA
ID=--500mA, VGS=--4.5V
ID=--300mA, VGS=--2.5V
ID=--100mA, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
min
--12
--0.3
0.6
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.0 V
1S
470 615 m
690 970 m
920 1380 m
92 pF
26.5
pF
18 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21505PE TS IM TB-00001058 No.8222-1/4









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SCH2315 Даташит, Описание, Даташиты
SCH2315
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--0.9A
VDS=--6V, VGS=--4.5V, ID=--0.9A
VDS=--6V, VGS=--4.5V, ID=--0.9A
IS=--0.9A, VGS=0
Ratings
min typ max
Unit
8.2 ns
3.5 ns
9.5 ns
15.5
ns
1.43
nC
0.31
nC
0.26
nC
--0.98
--1.5 V
Package Dimensions
unit : mm
2245
1.6
0.2
654
0.2
1 23
0.5
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : SCH6
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10µs
D.C.1%
G
VDD= --6V
ID= --0.5A
RL=12
D VOUT
SCH2315
P.G 50S
ID -- VDS
--0.9
--0.8 --1.8V
--0.7
--0.6
--0.5 --1.5V
--0.4
--0.3
--0.2
VGS= --1.0V
--0.1
0
0
2000
1800
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT09195
RDS(on) -- VGS
Ta=25°C
1600
1400
1200
ID= --100mA
1000
800
--300mA
--500mA
600
400
200
0
0
--1 --2 --3 --4 --5 --6
Gate-to-Source Voltage, VGS -- V IT09197
--0.9
VDS= --10V
--0.8
ID -- VGS
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
0
2000
--0.5 --1.0 --1.5 --2.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
--2.5
IT09196
1800
1600
1400
1200
1000
800
600
ID=
ID=
ID=
--100mA,
--300mA,
--500mA,
VGS= --1.8V
VGS= --2.5V
VGS= --4.5V
400
200
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09198
No.8222-2/4









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SCH2315 Даташит, Описание, Даташиты
SCH2315
yfs-- ID
3
2 VDS= --10V
1.0
7
5 25°C
3
2
Ta= --25°C75°C
0.1
7
5
3
2
0.01
--0.001 2 3
100
7
5
3
2
10
7
5
3
2
5 7--0.01 2 3 5 7 --0.1
Drain Current, ID -- A
SW Time -- ID
td(off)
td(on)
2 3 5 7 --1.0
IT09199
VDD= --6.0V
VGS= --4.5V
tf
1.0
7
5 tr
3
2
0.1
--0.01
23
--4.5
VDS= --6.0V
--4.0 ID= --0.9A
5 7 --0.1
23
Drain Current, ID -- A
VGS -- Qg
5 7 --1.0
IT09201
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.8
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT09203
PD -- Ta
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.25
3
2
100
7
5
3
2
IF -- VSD
VGS=0
--0.50
--0.75
--1.00
--1.25
--1.50
Diode Forward Voltage, VSD -- V IT09200
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
10
7
0 --2 --4 --6 --8 --10 --12
Drain-to-Source Voltage, VDS -- V IT09202
ASO
7
5 IDP= --3.6A
<10µs
3
2 100µs
--1.0 ID= --0.9A
7
5
3
100ms
2
--0.1
7
5
3
2
--0.01
--0.01
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2!0.8mm) 1unit
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Drain-to-Source Voltage, VDS -- V IT09204
0.65
0.6
0.4
0.2
0
0
Mounted on a ceramic board (900mm 2!0.8mm) 1unit
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09205
No.8222-3/4










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SCH2315General-Purpose Switching Device ApplicationsSanyo Semicon Device
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