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SCH2812 PDF даташит

Спецификация SCH2812 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «General-Purpose Switching Device Applications».

Детали детали

Номер произв SCH2812
Описание General-Purpose Switching Device Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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SCH2812 Даташит, Описание, Даташиты
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Ordering number : ENN8105
SCH2812
SCH2812
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
Composite type with a N-channel sillicon MOSFET (SCH1412) and a Schottky barrier diode (SS05015SH)
contained in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QM
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
30
±20
1.4
5.6
0.6
150
--55 to +125
V
V
A
A
W
°C
°C
15
15
0.5
3
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3004PE TS IM TB-00000512 No.8105-1/6









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SCH2812 Даташит, Описание, Даташиты
SCH2812
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF
IR
C
trr
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=700mA
ID=700mA, VGS=10V
ID=400mA, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
IS=1.4A, VGS=0
IR=0.5mA
IF=0.5A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Ratings
min typ max
Unit
30
1.2
0.66
1.1
230
400
65
14
8
5.0
4.0
11
3.0
2.5
0.6
0.3
0.87
V
1 µA
±10 µA
2.6 V
S
300 m
560 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
15 V
0.4
0.46
V
90 µA
13 pF
10 ns
Package Dimensions
unit : mm
2230A
1.6
0.2
654
0.2
1 23
0.5
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
Electrical Connection
65 4
12 3
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Top view
No.8105-2/6









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SCH2812 Даташит, Описание, Даташиты
Switching Time Test Circuit
[MOSFET]
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=700mA
RL=21.4
D VOUT
SCH2812
P.G 50S
SCH2812
trr Test Circuit
[SBD]
Duty10%
10µs 50
100
10
--5V
trr
ID -- VDS
[MOSFET]
2.0
4V
1.5
1.0
VGS=3V
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Drain-to-Source Voltage, VDS -- V IT03294
RDS(on) -- VGS [MOSFET]
800
Ta=25°C
700
600
500
ID=0.4A
400
0.7A
300
200
100
0
2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT03296
1.4
VDS=10V
1.2
ID -- VGS
[MOSFET]
1.0
0.8
0.6
0.4
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT03295
RDS(on) -- Ta
[MOSFET]
800
700
600
500
400
ID=0.4A, VGS=4V
300 ID=0.7A, VGS=10V
200
100
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03297
No.8105-3/6










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