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FGA120N30D PDF даташит

Спецификация FGA120N30D изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «300V PDP IGBT».

Детали детали

Номер произв FGA120N30D
Описание 300V PDP IGBT
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FGA120N30D Даташит, Описание, Даташиты
www.DataSheet4U.com
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides
low conduction and switching loss. FGA120N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
G
E
FGA120N30D
300
± 30
120
300
10
40
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.43
1.56
40
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA120N30D Rev. A
1
www.fairchildsemi.com









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FGA120N30D Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking
FGA120N30D
Device
FGA120N30D
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
BVCES/
TJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC = 25A, VGE = 15V
IC = 120A, VGE = 15V
IC = 120A, VGE = 15V,
TC = 125°C
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
300 --
--
V
-- 0.6 -- V/°C
-- -- 100 µA
-- -- ± 250 nA
2.5 4.0 5.0
-- 1.1 1.4
-- 1.9 --
-- 2.0 --
V
V
V
V
-- 2310 -
-- 360 -
-- 100 -
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 200V, IC = 25A,
RG = 8.7, VGE = 15V,
Resistive Load, TC = 25°C
VCC = 200V, IC = 25A,
RG = 8.7, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200V, IC = 25A,
VGE = 15V
-- 30 -- ns
-- 270 --
ns
-- 100 --
ns
-- 130 300 ns
-- 0.17 --
mJ
-- 0.56 --
mJ
-- 0.73 --
mJ
-- 30 -- ns
-- 280 --
ns
-- 105 --
ns
-- 180 --
ns
-- 0.18 --
mJ
-- 0.9 -- mJ
-- 1.08 --
mJ
--
120 180
nC
-- 15 22 nC
-- 60 90 nC
FGA120N30D Rev. A
2
www.fairchildsemi.com









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FGA120N30D Даташит, Описание, Даташиты
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10A
trr
Diode Reverse Recovery Time
IF = 10A
dI/dt = 200A/µs
Irr Diode Peak Reverse Recovery Cur-
rent
Qrr Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.1
0.9
21
35
2.8
5.6
29.4
98
Max.
1.4
--
--
--
--
--
--
--
Units
V
ns
A
nC
FGA120N30D Rev. A
3
www.fairchildsemi.com










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FGA120N30D300V PDP IGBTFairchild Semiconductor
Fairchild Semiconductor

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