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FGA15N120AND PDF даташит

Спецификация FGA15N120AND изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )».

Детали детали

Номер произв FGA15N120AND
Описание IGBT ( Insulated Gate Bipolar Transistor )
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FGA15N120AND Даташит, Описание, Даташиты
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FGA15N120AND
IGBT
General Description
Employing NPT technology, Fairchild’s AND series of
IGBTs provides low conduction and switching losses. The
AND series offers solutions for applications such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 210ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
GC E
TO-3P
G
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FGA15N120AND
1200
± 20
24
15
45
15
45
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.63
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A









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FGA15N120AND Даташит, Описание, Даташиты
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 3mA
VGE = 0V, IC = 3mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 15mA, VCE = VGE
IC = 15A, VGE = 15V
IC = 15A, VGE = 15V,
TC = 125°C
IC = 24A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 600 V, IC = 15A,
RG = 20, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 15A,
RG = 20, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 15A,
VGE = 15V
Measured 5mm from PKG
1200
--
--
--
-- -- V
0.6 -- V/°C
-- 3 mA
-- ± 100 nA
3.5 5.5 7.5
-- 2.4 3.2
-- 2.9 --
-- 3.0 --
V
V
V
V
-- 1150 --
-- 120 --
-- 56 --
pF
pF
pF
-- 90 -- ns
-- 70 -- ns
-- 310 --
ns
--
60 120
ns
-- 3.27 4.9 mJ
--
0.6 0.9
mJ
-- 3.68 5.8 mJ
-- 80 -- ns
-- 60 -- ns
-- 310 --
ns
-- 50 -- ns
-- 3.41 --
mJ
-- 0.84 --
mJ
-- 4.25 --
mJ
-- 120 180 nC
-- 9 14 nC
-- 63 95 nC
-- 14 -- nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM Diode Forward Voltage
trr Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr Diode Reverse Recovery Charge
Test Conditions
IF = 15A
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
IF = 15A
dI/dt = 200 A/µs
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.7
1.8
210
280
27
31
2835
4340
Max.
2.7
--
330
--
40
--
6600
--
Units
V
ns
A
nC
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A









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FGA15N120AND Даташит, Описание, Даташиты
120
T = 25
C
100
80
20V
17V
15V
12V
60
V = 10V
GE
40
20
0
02468
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
10
4.0
Common Emitter
V = 15V
GE
3.5
24A
3.0
I = 15A
C
2.5
2.0
25
50 75 100
Case Temperature, TC []
125
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T = 25
C
16
12
8
4 24A
15A
I = 7.5A
C
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2003 Fairchild Semiconductor Corporation
20
80
Common Emitter
V = 15V
GE
T = 25
C
60
T = 125
C
40
20
0
0246
Collector-Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
30
Vcc = 600V
load Current : peak of square wave
20
10
Duty cycle : 50%
Tc = 100
Powe Dissipation = 40W
0
0.1 1
10
Frequency [kHz]
100
Fig 4. Load Current vs. Frequency
1000
20
Common Emitter
T = 125
C
16
12
8
24A
4
15A
I = 7.5A
C
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
20
FGA15N120AND Rev. A










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