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FGA180N30D PDF даташит

Спецификация FGA180N30D изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «300V PDP IGBT».

Детали детали

Номер произв FGA180N30D
Описание 300V PDP IGBT
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FGA180N30D Даташит, Описание, Даташиты
www.DataSheet4U.com
June 2006
FGA180N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA180N30D provides
low conduction and switching loss. FGA180N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
GCE
TO-3P
Absolute Maximum Rating TC = 25oC unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA180N30D
300
± 30
180
450
10
40
480
192
-55 to +150
300
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.26
1.56
40
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA180N30D Rev. A
1
www.fairchildsemi.com









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FGA180N30D Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking
FGA180N30D
Device
FGA180N30D
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
BVCES/
TJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VGE = 0V, IC = 250µA
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 250uA, VCE = VGE
IC = 40A, VGE = 15V
IC = 180A, VGE = 15V,
TC = 25°C
IC = 180A, VGE = 15V,
TC = 125°C
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 200V, IC = 40A,
RG = 5, VGE = 15V,
Resistive Load, TC = 25°C
VCC = 200V, IC = 40A,
RG = 5, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200V, IC = 40A,
VGE = 15V
300 --
--
V
V/°C
-- 0.6 --
-- -- 100 µA
-- -- ± 250 nA
2.5 4.0 5.0
-- 1.1 1.4
-- 1.9 --
-- 2.0 --
V
V
V
V
-- 3420 --
-- 520 --
-- 150 --
pF
pF
pF
-- 30 -- ns
-- 210 --
ns
-- 100 --
ns
-- 140 300 ns
-- 0.26 --
mJ
-- 0.75 --
mJ
-- 1.01 --
mJ
-- 30 -- ns
-- 230 --
ns
-- 110 --
ns
-- 220 --
ns
-- 0.27 --
mJ
-- 1.0 -- mJ
-- 1.27 --
mJ
--
185 277
nC
-- 24 36 nC
-- 88 132 nC
FGA180N30D Rev. A
2
www.fairchildsemi.com









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FGA180N30D Даташит, Описание, Даташиты
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10A
trr
Diode Reverse Recovery Time
IF = 10A
dI/dt = 200A/µs
Irr Diode Peak Reverse Recovery Cur-
rent
Qrr Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.1
0.9
21
35
2.8
5.6
29.4
98
Max.
1.4
--
--
--
--
--
--
--
Units
V
ns
A
nC
FGA180N30D Rev. A
3
www.fairchildsemi.com










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Номер в каталогеОписаниеПроизводители
FGA180N30D300V PDP IGBTFairchild Semiconductor
Fairchild Semiconductor

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