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FQB7N65C PDF даташит

Спецификация FQB7N65C изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв FQB7N65C
Описание N-Channel MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FQB7N65C Даташит, Описание, Даташиты
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FQB7N65C
650V N-Channel MOSFET
Features
• 7A, 650V, RDS(on) = 1.4@VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
D
GS
D2-PAK
FQB Series
G
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
S
FQB7N65C
650
7
4.45
28
± 30
212
7
17.3
4.5
173
1.38
-55 to +150
300
FQB7N65C
0.75
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQB7N65C Rev. A
1
www.fairchildsemi.com









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FQB7N65C Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking Device
FQB7N65C
FQB7N65CTM
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID =3.5 A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 325 V, ID = 7A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 520 V, ID = 7A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 7 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 7 A,
dIF / dt = 100 A/µs
(Note 4)
650
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 7A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.8
--
--
--
--
--
1.2
8
955
100
12
20
50
90
55
28
4.5
12
--
--
--
400
3.3
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
1.4
-- S
1245
130
16
pF
pF
pF
50 ns
110 ns
190 ns
120 ns
36 nC
-- nC
-- nC
7A
28 A
1.4 V
-- ns
-- µC
FQB7N65C Rev. A
2 www.fairchildsemi.com









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FQB7N65C Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
Bottom: 5.0V
100
Notes :
1. 250µs PulseTest
2. TC =25
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
VGS = 10V
2.0
1.5
1.0
0
VGS = 20V
5 10
ID, DrainCurrent [A]
Note: TJ =25
15
Figure 5. Capacitance Characteristics
2000
1600
1200
800
400
Ciss
Coss
Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Note ;
1.
2.
Vf =GS1=M0HVz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150oC
100 25oC
-55oC
Notes :
1.
2.
V25DS0µ=s40PVulse
Test
10-1
2468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
101
100
10-1
0.2
150
25
Notes :
1.
2.
2V5G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10 VDS = 130V
VDS = 325V
8 VDS = 520V
6
4
2
Note : ID = 7A
0
0 4 8 12 16 20 24
QG, Total Gate Charge [nC]
28
FQB7N65C Rev. A
3 www.fairchildsemi.com










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