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FQPF60N03L PDF даташит

Спецификация FQPF60N03L изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «LOGIC N-Channel MOSFET».

Детали детали

Номер произв FQPF60N03L
Описание LOGIC N-Channel MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FQPF60N03L Даташит, Описание, Даташиты
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FQPF60N03L
30V LOGIC N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.
Features
• 39A, 30V, RDS(on) = 0.0135@VGS = 10 V
• Low gate charge ( typical 18.5 nC)
• Low Crss ( typical 155 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-220F
FQPF Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQPF60N03L
30
39
27.6
156
± 20
220
39
4.2
7.0
42
0.28
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ Max
-- 3.54
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001









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FQPF60N03L Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 30 V, VGS = 0 V
VDS = 24 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30 --
-- 0.02
-- --
-- --
-- --
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.5
VGS = 10 V, ID = 19.5 A
-- 0.011 0.0135
VGS = 5 V, ID =19.5 A
-- 0.015 0.019
VDS = 15 V, ID = 19.5 A (Note 4) --
28
--
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 875 1140
-- 570 740
-- 155 200
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 15 V, ID = 30 A,
RG = 25
(Note 4, 5)
VDS = 24 V, ID = 60 A,
VGS = 5 V
(Note 4, 5)
--
--
--
--
--
--
--
17
155
10
75
18.5
7
9.5
45
320
30
160
24
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 39 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 156 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 39 A
-- -- 1.5 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 60 A,
-- 40 -- ns
dIF / dt = 100 A/µs
(Note 4) --
35
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 145µH, IAS = 39A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 60A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001









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FQPF60N03L Даташит, Описание, Даташиты
Typical Characteristics
Top : 10.V0GVS
8.0 V
6.0 V
102 5.0 V
4.5 V
4.0 V
3.5 V
Bottom: 3.0V
101
Notes :
1. 250μ s Pulse Test
2. TC = 25
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
40
30
V = 5V
GS
20
VGS = 10V
10
Note : TJ = 25
0
0 40 80 120 160 200 240
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
C
oss
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
Notes :
1. VGS = 0 V
2. f =1 MHz
1000
500
C
rss
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175
25
-55
Notes :
1.
2.
V25DS0μ=s15PVulse
Test
100
0 2 4 6 8 10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
17525
Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 15V
10 DS
V = 24V
DS
8
6
4
2
Note : ID = 60A
0
0 5 10 15 20 25 30 35
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001










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