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IDT12S60C PDF даташит

Спецификация IDT12S60C изготовлена ​​​​«Infineon Technologies» и имеет функцию, называемую «2nd Generation thinQ SiC Schottky Diode».

Детали детали

Номер произв IDT12S60C
Описание 2nd Generation thinQ SiC Schottky Diode
Производители Infineon Technologies
логотип Infineon Technologies логотип 

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IDT12S60C Даташит, Описание, Даташиты
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2nd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDT12S60C
600 V
30 nC
12 A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
IDT12S60C
Package
PG-TO220-2-2
Marking
D12S60C
Pin 1
C
Pin 2
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
RMS forward current
IF
I F,RMS
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C<140 °C
f =50 Hz
T C=25 °C, t p=10 ms
Repetitive peak forward current
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode ruggedness dv/dt
Power dissipation
Operating and storage temperature
Mounting torque
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
I F,max T C=25 °C, t p=10 µs
i 2dt
T C=25 °C, t p=10 ms
V RRM
dv/ dt VR=0…480V
P tot T C=25 °C
T j, T stg
M3 and M3.5 screws
Value
12
18
98
49
410
48
600
50
115
-55 ... 175
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
Rev. 2.0
page 1
2006-03-14









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IDT12S60C Даташит, Описание, Даташиты
Parameter
Symbol Conditions
IDT12S60C
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
leaded
- - 1.3 K/W
- - 62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6mm(0.063 in.) from
case for 10s
-
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
Diode forward voltage
V DC I R=0.16 mA
V F I F=12 A, T j=25 °C
I F=12 A, T j=150 °C
600 -
- 1.5
- 1.7
-V
1.7
2.1
Reverse current
IR
V R=600 V, T j=25 °C
-
1.5 160 µA
AC characteristics
Total capacitive charge
Switching time3)
Total capacitance
V R=600 V, T j=150 °C
-
6 1600
Q c V R=400 V, I FI F,max,
di F/dt =200 A/µs,
t c T j=150 °C
-
-
30 - nC
- <10 ns
C V R=1 V, f =1 MHz
- 530 - pF
V R=300 V, f =1 MHz
-
70
-
V R=600 V, f =1 MHz
-
70
-
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4) Only capacitive charge occuring, guaranteed by design.
Rev. 2.0
page 2
2006-03-14









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IDT12S60C Даташит, Описание, Даташиты
1 Power dissipation
P tot=f(T C)
parameter: R thJC(max)
120
2 Diode forward current
I F=f(T C); T j175 °C
parameter. R thJC(max); V F(max)
35
IDT12S60C
100 30
25
80
20
60
15
40
10
20 5
0
25 50 75 100 125 150 175 200
T C [°C]
0
25 50 75 100 125 150 175 200
T C [°C]
3 Typ. forward characteristic
I F=f(V F); t p=400 µs
parameter: T j
40
-55 °C
25 °C 150 °C
175 °C
100 °C
4 Typ. forward characteristic in surge current
mode
I F=f(V F); t p=400 µs; parameter: T j
140
120
30
100
150 °C
20
10
0
0
Rev. 2.0
123
V F [V]
80 25 °C
60 -55 °C
175 °C
40 100 °C
20
0
4 01234567
V F [V]
page 3
2006-03-14










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Номер в каталогеОписаниеПроизводители
IDT12S60C2nd Generation thinQ SiC Schottky DiodeInfineon Technologies
Infineon Technologies

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