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IRH7054 PDF даташит

Спецификация IRH7054 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «RADIATION HARDENED POWER MOSFET THRU-HOLE».

Детали детали

Номер произв IRH7054
Описание RADIATION HARDENED POWER MOSFET THRU-HOLE
Производители International Rectifier
логотип International Rectifier логотип 

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IRH7054 Даташит, Описание, Даташиты
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PD - 90883B
RADIATION HARDENED
IRH7054
POWER MOSFET
60V, N-CHANNEL
THRU-HOLE (T0-204AA/AE) RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRH7054
100K Rads (Si) 0.025
IRH3054
300K Rads (Si) 0.025
ID
45*A
45*A
IRH4054
600K Rads (Si) 0.02545*A
IRH8054
1000K Rads (Si) 0.02545*A
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-204AE
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
45*
32 A
210
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
500
Avalanche Current
35
Repetitive Avalanche Energy
15
Peak Diode Recovery dv/dt
3.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
11.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
*Current is limited by pin diameter
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IRH7054 Даташит, Описание, Даташиты
IRH7054
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
60
—
—
—
2.0
12
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
—— V
0.053 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.025
— 0.028
— 4.0
——
— 25
— 250
— 100
— -100
— 200
— 60
— 75
— 27
— 100
— 75
— 75
10 —
4100
2000
560
—
—
—
V
S( )
µA
nA
nC
ns
VGS = 12V, ID = 32A
VGS = 12V, ID = 45A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 30V
VDD =30V, ID = 35A
VGS =12V, RG = 2.35
nH Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in. from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
45
210
A
VSD Diode Forward Voltage
— — 1.4 V
trr Reverse Recovery Time
— — 280 nS
QRR Reverse Recovery Charge
— — 2.2 µC
Tj = 25°C, IS = 35A, VGS = 0V
Tj = 25°C, IF = 35A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max
— — 0.83
— — 30
— 0.12 —
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRH7054 Даташит, Описание, Даташиты
PRraed-iIartriaodniaCthioanracteristics
IRH7054
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)
Min Max
300 - 1000K Rads (Si) Units
Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage
V/5JD Gate Threshold Voltage
IGSS
Gate-to-Source Leakage Forward
IGSS
Gate-to-Source Leakage Reverse
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source"
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source"
On-State Resistance (TO-204AE)
VSD Diode Forward Voltage"
1. Part numbers IRH7054,
2. Part number IRH3054, IRH4540 and IRH8054
60 —
2.0 4.0
60
1.25
—
4.5
V
— 100
— -100
— 100 nA
— -100
— 25
— 50 µA
— 0.027 — 0.027
— 0.027 — 0.027
— 1.4 —
1.4 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=48V, VGS =0V
VGS = 12V, ID =45A
VGS = 12V, ID =45A
VGS = 0V, IS = 35A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
Energy Range
VDS(V)
MeV/(mg/cm )) (MeV)
(µm) @VGS=0V @VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V
I 59.9
345 32.8 60
60
45
40
30
Br 36.8
305 39
40
35
30
25
20
70
60
50
40 BR
30 I
20
10
0
0 -5 -10 -15 -20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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Номер в каталогеОписаниеПроизводители
IRH7054RADIATION HARDENED POWER MOSFET THRU-HOLEInternational Rectifier
International Rectifier

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