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IRH7130 PDF даташит

Спецификация IRH7130 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «RADIATION HARDENED POWER MOSFET».

Детали детали

Номер произв IRH7130
Описание RADIATION HARDENED POWER MOSFET
Производители International Rectifier
логотип International Rectifier логотип 

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IRH7130 Даташит, Описание, Даташиты
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PD - 90676D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA/AE)
IRH7130
100V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRH7130
100K Rads (Si) 0.18
IRH3130
300K Rads (Si) 0.18
IRH4130
600K Rads (Si) 0.18
IRH8130
1000K Rads (Si) 0.18
ID
14A
14A
14A
14A
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-204AA
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
14
9.0 A
56
75 W
0.60
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
160
Avalanche Current
14
Repetitive Avalanche Energy
7.5
Peak Diode Recovery dv/dt
5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
11.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
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IRH7130 Даташит, Описание, Даташиты
IRH7130
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
—
—
2.0
3.3
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
—— V
0.12 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.18
— 0.20
— 4.0
——
— 25
— 250
— 100
— -100
— 45
— 11
— 17
— 30
— 120
— 49
— 64
10 —
1100
310
55
—
—
—
V
S( )
µA
nA
nC
ns
VGS = 12V, ID =9.0A
VGS = 12V, ID = 14A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 9.0A
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =14A
VDS = 50V
VDD = 50V, ID =14A
VGS =12V, RG = 7.5
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — —
ISM Pulse Source Current (Body Diode)
——
14
56
A
VSD Diode Forward Voltage
— — 1.8 V
trr Reverse Recovery Time
— — 370 nS
QRR Reverse Recovery Charge
— — 3.5 µC
Tj = 25°C, IS = 14A, VGS = 0V
Tj = 25°C, IF = 14A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max
— — 1.67
— — 30
— 0.12 —
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRH7130 Даташит, Описание, Даташиты
PRraed-iIartriaodniaCtihoanracteristics
IRH7130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)
Min Max
300 - 1000K Rads (Si) Units
Min Max
Test Conditions
BVDSS
V/5JD
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source"
On-State Resistance (TO-3)
Static Drain-to-Source"
On-State Resistance (TO-204AA)
Diode Forward Voltage"
100
2.0
—
—
—
—
—
—
—
4.0
100
-100
25
0.18
100 —
1.25 4.5
V
— 100 nA
— -100
— 25 µA
— 0.24
0.18 — 0.24
1.8 — 1.8 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID =9.0A
VGS = 12V, ID =9.0A
VGS = 0V, IS = 14A
1. Part numbers IRH7130,
2. Part number IRH8130, IRH3130 and IRH4130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
Energy Range
VDS(V)
MeV/(mg/cm )) (MeV)
(µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V
Cu 28
285 43
100
100
100
80
60
Br 36.8
305 39
100
90
70
50
—
120
100
80
60
40
20
0
0
-5 -10 -15 -20 -25
VGS
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRH7130RADIATION HARDENED POWER MOSFETInternational Rectifier
International Rectifier

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