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IRH7250 PDF даташит

Спецификация IRH7250 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «(IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR».

Детали детали

Номер произв IRH7250
Описание (IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
Производители International Rectifier
логотип International Rectifier логотип 

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IRH7250 Даташит, Описание, Даташиты
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PD - 90697B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRH7250
IRH8250
N CHANNEL
MEGA HARD RAD
200Volt, 0.11, MEGA RAD HARD HEXFET Product Summary
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x106 Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 105 Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Absolute Maximum Ratings 
Part Number
IRH7250
IRH8250
BVDSS
200V
200V
RDS(on)
0.11
0.11
ID
26A
26A
Features:
n Radiation Hardened up to 1 x 106 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Pre-Irradiation
Parameter
IRH7250, IRH8250
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ‚
Max. Power Dissipation
Linear Derating Factor
26
16 A
104
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ƒ
Avalanche Current ‚
Repetitive Avalanche Energy‚
Peak Diode Recovery dv/dt „
±20
500
26
15
5.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
oC
Weight
11.5 (typical)
g
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IRH7250 Даташит, Описание, Даташиты
IRH7250, IRH8250 Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) 
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
2.0
8.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
—— V
0.27 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.10
— 0.11
— 4.0
——
— 25
— 250
— 100
— -100
— 170
— 30
— 60
— 33
— 140
— 140
— 140
5.0 —
13 —
4700
850
210
V
S( )
µA
nA
nC
VGS = 12V, ID = 16A …
VGS = 12V, ID = 26A …
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 16A …
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 26A
VDS = Max Rating x 0.5
VDD = 100V, ID = 26A,
ns RG = 2.35
nH
pF
Measured from drain Modified MOSFET sym-
lead, 6mm (0.25 in) bol showing the internal
from package to center inductances.
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics 
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 26
ISM Pulse Source Current (Body Diode) ‚
— — 104
A Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.4 V
— — 820 ns
— — 12 µC
Tj = 25°C, IS = 26A, VGS = 0V …
Tj = 25°C, IF = 26A, di/dt 100A/µs
VDD 50V …
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
——
——
0.12 —
0.83
30
°C/W
Test Conditions
Typical socket mount
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IRH7250 Даташит, Описание, Даташиты
IRH7250, IRH8250 Devices
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 5 and a V bias condition equal to 80% of the
DS
device rated voltage per note 6. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 105 Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRH7250. Post-irradiation limits of the devices
irradiated to 1 x 106 Rads (Si) are presented in Table
1, column 2, IRH8250. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 1. Low Dose Rate † ‡
Parameter
IRH7250 IRH8250
100K Rads (Si) 1000K Rads (Si) Units
Min Max Min Max
Test Conditions ‰
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
VSD
Drain-to-Source Breakdown Voltage 200 —
Gate Threshold Voltage …
2.0 4.0
Gate-to-Source Leakage Forward — 100
Gate-to-Source Leakage Reverse — -100
Zero Gate Voltage Drain Current
— 25
Static Drain-to-Source …
— 0.100
On-State Resistance One
Diode Forward Voltage …
— 1.4
200
1.25
4.5
100
-100
50
0.155
1.4
V
nA
µA
V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=0.8 x Max Rating, VGS =0V
VGS = 12V, ID = 16A
TC = 25°C, IS =26A,VGS = 0V
Table 2. High Dose Rate ˆ
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Test Conditions
— — 160 — — 160 V Applied drain-to-source voltage during
gamma-dot
— 15 — — 15 — A Peak radiation induced photo-current
— — 160 — — 8.0 A/µsec Rate of rise of photo-current
1.0 — — 20 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
LET (Si)
Ion (MeV/mg/cm2)
Cu 28
Fluence
(ions/cm2)
3x 105
Range
(µm)
43
VDSBias
(V)
180
VGS Bias
(V)
-5
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International Rectifier

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