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IRH7450SE PDF даташит

Спецификация IRH7450SE изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «TRANSISTOR N-CHANNEL».

Детали детали

Номер произв IRH7450SE
Описание TRANSISTOR N-CHANNEL
Производители International Rectifier
логотип International Rectifier логотип 

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IRH7450SE Даташит, Описание, Даташиты
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Provisional Data Sheet No. PD 9.1390
REPETITIVE AVALANCHE AND dv/dt RATED
IRH7450SE
HEXFET® TRANSISTOR
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.51, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the (SEE) pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BV DSS
IRH7450SE
500V
RDS(on)
0.51
ID
11A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Pre-Radiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
IRH7450SE
Units
Continuous Drain Current
Continuous Drain Current
11
7.0 A
Pulsed Drain Current 
44
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/K …
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy ‚
500 mJ
Avalanche Current 
11 A
Repetitive Avalanche Energy 
15 mJ
Peak Diode Recovery dv/dt ƒ
3.5 V/ns
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.0063 in. (1.6mm) from case for 10 sec.)
Weight
11.5 (typical)
g
To Order









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IRH7450SE Даташит, Описание, Даташиты
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IRH7450SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
500
2.5
3
Typ. Max. Units
—— V
0.6 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.51
— 0.57
— 4.5
——
— 50
— 250
— 100
— -100
— 180
— 45
— 105
— 45
— 190
— 190
— 130
8.7 —
8.7 —
4000
330
52
V
S( )
µA
nA
nC
VGS = 12V, ID =7.0A
VGS = 12V, ID = 11A
„
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 7.0A „
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 11A
VDS = Max. Rating x 0.5
VDD = 250V, ID =11A,
ns RG = 2.35
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
pF f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) 
Min. Typ. Max. Units
Test Conditions
——
——
11
44
A Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
— — 1.6 V
— — 1100 ns
— — 16 µC
Tj = 25°C, IS = 11A, VGS = 0V „
Tj = 25°C, IF =11 A, di/dt 100A/µs
VDD 50V „
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 0.83
— — 30 K/W …
— 0.12 —
Test Conditions
Typical Socket Mount
To Order









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IRH7450SE Даташит, Описание, Даташиты
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IRH7450SE Device
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
VDSS bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
post-radiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 105 Rads (Si),
no change in limits are specified in DC parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate † ‡
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage „
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance One
Diode Forward Voltage „
IRH7450SE
100K Rads (Si)
min. max.
500 —
2.5 4.5
— 100
— -100
— 50
— 0.51
Units Test Conditions Š
V VGS = 0V, ID = 1.0 mA
VGS = VDS, ID = 1.0 mA
nA VGS = 20V
VGS = -20V
µA VDS = 0.8 x Max Rating, VGS = 0V
VGS = 12V, ID =7A
— 1.6 V TC = 25°C, IS = 11A,VGS = 0V
Table 2. High Dose Rate ˆ
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
— — 400 — — 400 V Applied drain-to-source voltage
during gamma-dot
— 8 — — 8 — A Peak radiation induced photo-current
— — 15 — — 3 A/µsec Rate of rise of photo-current
27 — — 133 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects ‰
Parameter
BVDSS
Typ.
500
Units
V
LET (Si)
Fluence Range
Ion (MeV/mg/cm2) (ions/cm2) (µm)
Ni 28
1 x 105
~35
VDS Bias
(V)
400
VGS Bias
(V)
-5
To Order










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IRH7450SETRANSISTOR N-CHANNELInternational Rectifier
International Rectifier

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