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IXFK50N50 PDF даташит

Спецификация IXFK50N50 изготовлена ​​​​«IXYS Corporation» и имеет функцию, называемую «(IXFx5xN50) HiPerFET Power MOSFET».

Детали детали

Номер произв IXFK50N50
Описание (IXFx5xN50) HiPerFET Power MOSFET
Производители IXYS Corporation
логотип IXYS Corporation логотип 

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IXFK50N50 Даташит, Описание, Даташиты
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HiPerFETTM
Power MOSFET
Single Die MOSFET
Preliminary data sheet
IXFN 55N50
IXFN 50N50
IXFK 55N50
IXFK 50N50
VDSS
500V
500V
500V
500V
ID25
RDS(on)
trr
55A 80m250ns
50A 100m250ns
55A 80m250ns
50A 100m250ns
Symbol
Test Conditions
IXFK
55N50
Maximum Ratings
IXFK
IXFN
50N50 55N50
IXFN
50N50
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
500
500
±20
±30
500 V
500 V
±20 V
±30 V
TC = 25°C
TC =25°C,
TC = 25°C
55 50 55
220 200 220
55 50 55
TC = 25°C
60
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
5
TC = 25°C
560
-55 ... +150
150
-55 ... +150
50 A
200 A
50 A
60 mJ
5 V/ns
600 W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
N/A
°C
50/60 Hz, RMS
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
N/A
N/A
0.9/6
N/A
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10 30 g
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 1mA
500 V
VGS(th)
VDS = VGS, ID = 8mA
2.5 4.5 V
IGSS
IDSS
RDS(on)
VGS = ±20V; VDS = 0V
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
TJ = 25°C
TJ = 125°C
55N50
50N50
±200
25
2
80
100
nA
µA
mA
m
m
TO-264 AA (IXFK)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
© 2002 IXYS All rights reserved
97502F (04/02)









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IXFK50N50 Даташит, Описание, Даташиты
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VDS = 10 V; ID = 0.5 • ID25 Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
45
9400
1280
460
45
60
120
45
330
55
155
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
RthJC
RthCK
RthJC
RthCK
TO-264 AA
TO-264 AA
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.22
0.15
0.21
0.05
K/W
K/W
K/W
K/W
Source-Drain Diode
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
IS VGS = 0
55N50
50N50
Characteristic Values
Min. Typ. Max.
55 A
50 A
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.00
20.32
2.29
0.25
0.25
20.83
2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
miniBLOC, SOT-227 B
ISM Repetitive;
55N50
pulse width limited by TJM
50N50
VSD IF = 100 A, VGS = 0 V
Note 1
trr
QRM IF = 25 A, -di/dt = 100 A/µs, VR = 100 V
IRM
Notes: 1. Pulse test, t 300 µs, duty cycle d 2 %
220
200
1.5
250
1.0
10
A
A
V
ns
µC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50
7.80
31.88
8.20
4.09 4.29
4.09 4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94 4.42
4.72 4.85
24.59
-0.05
25.07
0.1
Inches
Min. Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025









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IXFK50N50 Даташит, Описание, Даташиты
Figure 1. Output Characteristics at 25OC
140
120
TJ = 25OC
100
VGS = 10V
9V
8V
7V
6V
80
60
40 5V
20
0
0 4 8 12 16 20 24
VDS - Volts
Figure 3. RDS(on) normalized to 0.5
2.8 ID25 value vs. ID
VGS = 10V
2.4
TJ = 125OC
2.0
1.6
TJ = 25OC
1.2
0.8
0
20 40 60 80 100 120
ID - Amperes
Figure 5. Drain Current vs. Case Temperature
60
50 IXF_55N50
40 IXF_50N50
30
20
10
0
-50 -25
0 25 50 75 100 125 150
TC - Degrees C
© 2002 IXYS All rights reserved
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
Figure 2. Output Characteristics at 125OC
100
80
TJ = 125OC
VGS = 10V
9V
8V
7V
6V
60
5V
40
20
0
0 4 8 12 16 20 24
VDS - Volts
Figure 4. RDS(on) normalized to 0.5
2.2 ID25 value vs. TJ
2.0 VGS = 10V
1.8
ID = 55A
1.6
1.4
ID = 27.5A
1.2
1.0
25
50 75 100 125
TJ - Degrees C
150
Figure 6. Admittance Curves
100
80
TJ = 125oC
60
40
20 TJ = 25oC
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS - Volts










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Номер в каталогеОписаниеПроизводители
IXFK50N50(IXFx5xN50) HiPerFET Power MOSFETIXYS Corporation
IXYS Corporation

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