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IXFX52N60Q2 PDF даташит

Спецификация IXFX52N60Q2 изготовлена ​​​​«IXYS Corporation» и имеет функцию, называемую «(IXFK52N60Q2 / IXFX52N60Q2) Advanced Technical Information».

Детали детали

Номер произв IXFX52N60Q2
Описание (IXFK52N60Q2 / IXFX52N60Q2) Advanced Technical Information
Производители IXYS Corporation
логотип IXYS Corporation логотип 

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IXFX52N60Q2 Даташит, Описание, Даташиты
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFK 52N60Q2
IXFX 52N60Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
VDSS
ID25
RDS(on)
=
=
=
600 V
52 A
115 m
trr 250 ns
Symbol
VVDDGSRS
VVGGSSM
IIDDM25
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 M
Continuous
Transient
TTCC
= 25°C
= 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
600 V
600 V
±30 V
±40 V
52 A
208 A
52 A
75 mJ
4.0 J
20 V/ns
735
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS-247
TO-264
6g
10 g
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
VGS = ±30 VDC, VDS = 0
VVGDSS
=
=
0VDVSS
TTJJ
=
=
25°C
125°C
VPGuSlse=
10 V,
test, t
ID
3=000.5µs• ,IDd2u5 ty
cycle
d
2
%
600
2.0
V
4.5 V
±200 nA
50 µA
2 mA
115 m
PLUS 247TM (IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Double metal process for low gate
resistance
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Avalanche energy and current rated
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS98982A(12/03)









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IXFX52N60Q2 Даташит, Описание, Даташиты
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30 40
6800
1000
225
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1.0 (External),
23
13
56
8.5
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
198
43
94
nC
nC
nC
TO-264
0.17 K/W
0.15
K/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
52 A
ISM Repetitive; pulse width limited by TJM
208 A
VSD
IF = IS, VGS
Pulse test,
= 0 V,
t 300
µs,
duty
cycle
d
2
%
trr
QRM
IRM
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
1.5 V
250 ns
1 µC
10 A
IXFK 52N60Q2
IXFX 52N60Q2
PLUS 247TM Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A
A
1
2
2.29
1.91
2.54
2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
TO-264 AA Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32
2.29
3.17
20.83
2.59
3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025










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Номер в каталогеОписаниеПроизводители
IXFX52N60Q2(IXFK52N60Q2 / IXFX52N60Q2) Advanced Technical InformationIXYS Corporation
IXYS Corporation

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