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MAX6883 PDF даташит

Спецификация MAX6883 изготовлена ​​​​«Maxim Integrated Products» и имеет функцию, называемую «(MAX6880 - MAX6883) Power-Supply Sequencers/Supervisors».

Детали детали

Номер произв MAX6883
Описание (MAX6880 - MAX6883) Power-Supply Sequencers/Supervisors
Производители Maxim Integrated Products
логотип Maxim Integrated Products логотип 

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MAX6883 Даташит, Описание, Даташиты
www.DataSheet4U.com
19-3772; Rev 1; 10/05
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
General Description
The MAX6880–MAX6883 dual-/triple-voltage monitors
are designed to sequence power supplies during
power-up condition. When all of the voltages exceed
their respective thresholds, these devices turn on volt-
ages to the system sequentially, enhancing n-channel
MOSFETs used as switches. The time between each
sequenced voltage is determined by an external
capacitor, thus allowing flexibility in delay timing. The
MAX6880/MAX6881 sequence three voltages and the
MAX6882/MAX6883 sequence two voltages.
These devices initially monitor all of the voltages and
when all of them are within their tolerances, the inter-
nal charge pumps enhance external n-channel
MOSFETs in a sequential manner to apply the volt-
ages to the system. Internal charge pumps drive the
gate voltages 5V above the respective input voltage
thereby ensuring the MOSFETs are fully enhanced to
reduce the on-resistance.
The MAX6880–MAX6883 feature capacitor-adjustable
slew-rate control to provide controlled turn-on charac-
teristics. After all of the voltages reach 92.5% of their
final value, a power-good output (MAX6880/MAX6882)
signal is active. The power-good output (PG/RST) can
be delayed with an external capacitor to create a
power-on reset delay. After the initial power-up phase,
the MAX6880–MAX6883 continue to monitor the volt-
ages. If any of the voltages falls below its threshold, the
MOSFETs are quickly turned off and the voltages are
tracked down together. An internal 100pulldown
resistor ensures that the capacitance at the MOSFET’s
source is discharged quickly. The power-good output
goes low to provide a system reset.
The MAX6880–MAX6883 are available in small 4mm x
4mm 24-pin and 16-pin thin QFN packages and speci-
fied over the -40°C to +85°C extended operating tem-
perature range.
Applications
Multivoltage Systems
Networking Systems
Telecom
Storage Equipment
Servers/Workstations
Features
Capacitor-Adjustable Power-Up Sequencing
Delay
Internal Charge Pumps to Enhance External
n-Channel FETs
Capacitor-Adjustable Timeout Period Power-Good
Output (MAX6880/MAX6882)
Adjustable Undervoltage Lockout or
Logic-Enable Input
Internal 100Pulldown for Each Output to
Discharge Capacitive Load Quickly
0.5V to 5.5V Nominal IN_/OUT_ Range
2.7V to 5.5V Operating Voltage Range
Immune to Short Voltage Transients
Small 4mm x 4mm 24-Pin or 16-Pin Thin QFN
Packages
Ordering Information
PART
TEMP RANGE
MAX6880ETG+ -40°C to +85°C
MAX6881ETE+ -40°C to +85°C
MAX6882ETE+ -40°C to +85°C
MAX6883ETE+ -40°C to +85°C
+Denotes lead-free package.
PIN-
PACKAGE
24 Thin QFN
16 Thin QFN
16 Thin QFN
16 Thin QFN
PKG
CODE
T2444-4
T1644-4
T1644-4
T1644-4
Pin Configurations
TOP VIEW
18 17 16 15 14 13
GATE2 19
12 N.C.
OUT1 20
11 N.C.
GATE1 21
IN3 22
IN2 23
IN1 24
+
12
MAX6880
EP*
34
5
10 TIMEOUT
9 SLEW
8 DELAY
7 GND
6
Selector Guide appears at end of data sheet.
4mm x 4mm THIN QFN
*EXPOSED PADDLE CONNECTED TO GND.
Pin Configurations continued at end of data sheet.
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.









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MAX6883 Даташит, Описание, Даташиты
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
IN1, IN2, IN3.............................................................-0.3V to +6V
ABP .........................................-0.3V to the highest of VIN1 - VIN3
SET1, SET2, SET3 ....................................................-0.3V to +6V
GATE1, GATE2, GATE3 .........................................-0.3V to +12V
OUT1, OUT2, OUT3 .................................................-0.3V to +6V
MARGIN ...................................................................-0.3V to +6V
PG/RST, EN/UV ........................................................-0.3V to +6V
DELAY, SLEW, TIMEOUT .........................................-0.3V to +6V
OUT_ Current....................................................................±50mA
GND Current.....................................................................±50mA
Input/Output Current (all pins except
OUT_ and GND) ...........................................................±20mA
Continuous Power Dissipation (TA = +70°C)
16-Pin 4mm x 4mm Thin QFN
(derate 16.9mW/°C above +70°C) .............................1349mW
24-Pin 4mm x 4mm Thin QFN
(derate 20.8mW/°C above +70°C) .............................1667mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Maximum Junction Temperature .....................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(IN1, IN2, or IN3 = +2.7V to +5.5V, EN/UV = MARGIN = ABP, TA = -40°C to +85°C, unless otherwise specified. Typical values are
at TA = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Operating Voltage Range
Supply Current
SET_ Threshold Range
SET_ Threshold Hysteresis
SET_ Input Current
EN/UV Input Voltage
EN/UV Input Current
EN/UV Input Pulse Width
DELAY, TIMEOUT Output Current
DELAY, TIMEOUT Threshold
Voltage
SLEW Output Current
Sequence Slew-Rate Timebase
Accuracy
Timebase/CSLEW Ratio
Slew-Rate Accuracy during Power-
Up and Power-Down
SYMBOL
IN_
ICC
VTH
VTH_HYST
ISET
VEN_R
VEN_F
IEN
tEN
ID
CONDITIONS
Voltage on the highest of IN_ to ensure that
PG/RST is valid and GATE_ = 0
Voltage on the highest of IN_ to ensure the
device is fully operational
IN1 = 5.5V, IN2 = IN3 = 3.3V, no load
SET_ falling, TA = +25oC
SET_ falling, TA = -40 °C to +85°C
SET_ rising
SET_ = 0.5V
Input rising
Input falling
EN/UV falling, 100mV overdrive
(Notes 2, 3)
VCC = 3.3V
IS (Note 4)
SR CSLEW = 200pF
100pF < CSLEW < 1nF
CSLEW = 200pF, VIN_ = 5.5V (Note 4)
MIN TYP MAX UNITS
1.4
V
2.7 5.5
0.4925
0.4875
-100
1.22
-5
7
2.12
1.1
0.5
0.5
0.5
1.286
1.25
2.5
1.8
0.5075
0.5125
+100
1.28
+5
2.88
mA
V
%
nA
V
µA
µs
µA
1.25 V
22.5 25 27.5 µA
-15 +15 %
104 k
-50 +50 %
2 _______________________________________________________________________________________









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MAX6883 Даташит, Описание, Даташиты
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
ELECTRICAL CHARACTERISTICS (continued)
(IN1, IN2, or IN3 = +2.7V to +5.5V, EN/UV = MARGIN = ABP, TA = -40°C to +85°C, unless otherwise specified. Typical values are
at TA = +25°C, unless otherwise noted.) (Note 1)
Power-Good Threshold
Power-Good Threshold Hysteresis
GATE_ Output High
VTH_PG VOUT_ falling
VHYS_PG VOUT_ rising
VGOH ISOURCE = 0.5µA
91.5
IN_ +
4.2
92.5
0.5
IN_ +
5.0
93.5
IN_ +
5.8
%
%
V
GATE_ Pullup Current
IGUP
During power-up and power-down,
VGATE_ = 1V
2.5 4
µA
GATE_ Pulldown Current
SET_ to GATE_ Delay
PG/RST Output Low
IGD
During power-up and power-down,
VGATE_ = 5V
2.5 4
µA
IGDS
When disabled, VGATE_ = 5V, VIN_ 2.7V
When disabled, VGATE_ = 5V, VIN_ 4V
9.5
mA
20
tD-GATE SET falling, 25mV overdrive
10 µs
VOL
VIN_ 2.7V, ISINK = 1mA, output asserted
VIN_ 4.0V, ISINK = 4mA, output asserted
0.3
V
0.4
Differential between each of the OUT_ and
Tracking Differential Voltage Stop
Ramp
VTRK
the ramp voltage during power-up and
power-down, Figure 1 (Note 5)
75 125 180 mV
Tracking Differential Fault Voltage
VTRK_F
Differential between each of the OUT_ and
the ramp voltage, Figure 1 (Note 5)
200
250
310
mV
Power-Low Threshold
Power-Low Hysteresis
OUT to GND Pulldown Impedance
MARGIN Pullup Current
MARGIN Input Voltage
MARGIN Glitch Rejection
VTH_PL OUT_ falling
VTH_PLHYS OUT_ rising
IN_ > 2.7V (Note 6)
IIN
VIL
VIH
125 142 170 mV
10 mV
100
7 10 13 µA
0.8
V
2.0
100 ns
Note 1: Specifications guaranteed for the stated global conditions. 100% production tested at TA = +25°C and TA = +85°C.
Specifications at TA = -40°C to +85°C are guaranteed by design. These devices meet the parameters specified when at
least one of IN1/IN2/IN3 is between 2.7V to 5.5V, while the remaining IN1/IN2/IN3 are between 0 and 5.5V.
Note 2: A current ID = 2.5µA ±15% is generated internally and is used to set the DELAY and TIMEOUT periods and used as a refer-
ence for tDELAY and tTIMEOUT.
Note 3: The total DELAY is tDELAY = 200µs + (500kx CDELAY). Leave DELAY unconnected for 200µs delay. The total TIMEOUT is
tTIMEOUT = 200µs + (500kx CTIMEOUT). Leave TIMEOUT unconnected for 200µs timeout.
Note 4: A current IS = 25µA ±10% is generated internally and used as a reference for tFAULT, tRETRY, and slew rate.
Note 5: During power-up, only the condition OUT_ < ramp - VTRK is checked in order to stop the ramp. However, both conditions
OUT_ < ramp – VTRK_F and OUT_ > ramp + VTRK_F cause a fault. During power-down, only the condition OUT > ramp +
VTRK is checked in order to stop the ramp. However, both conditions OUT_ < ramp - VTRK_F and OUT_ > ramp + VTRK_F
cause a fault (see Figure 10). Therefore, if OUT1, OUT2, and OUT3 (during power-up tracking and power-down) differ by
more than 2 x VTRK_F, a fault condition is asserted.
Note 6: A 100pulldown to GND activated by a fault condition. See the Internal Pulldown section.
_______________________________________________________________________________________ 3










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