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MNCLC501A-X PDF даташит

Спецификация MNCLC501A-X изготовлена ​​​​«National Semiconductor» и имеет функцию, называемую «HIGH-SPEED OUTPUT CLAMPING OP AMP».

Детали детали

Номер произв MNCLC501A-X
Описание HIGH-SPEED OUTPUT CLAMPING OP AMP
Производители National Semiconductor
логотип National Semiconductor логотип 

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MNCLC501A-X Даташит, Описание, Даташиты
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MNCLC501A-X REV 0A0
MICROCIRCUIT DATA SHEET
Original Creation Date: 08/06/98
Last Update Date: 03/09/99
Last Major Revision Date: 02/26/99
HIGH-SPEED OUTPUT CLAMPING OP AMP
General Description
The CLC501 is a high-speed current-feedback op amp with the unique feature of output
voltage clamping. This feature allows both the maximum positive (Vhigh) and negative
(Vlow) output voltage levels to be established. This is useful in a number of
applications in which "downstream" circuitry must be protected from overdriving input
signals. Not only can this prevent damage to downstream circuitry, but can also reduce
time delays since saturation is avoided. The CLC501's very fast 1ns overload/clamping
recovery time is useful in applications in which information-containing signals follow
overdriving signals.
Engineers designing high-resolution, subranging A/D systems have long sought an amplifier
capable of meeting the demanding requirements of the residue amplifier function.
Amplifiers providing the residue function must not only settle quickly, but recover from
overdrive quickly, protect the second stage A/D, and provide high fidelity at relatively
high gain settings. The CLC501, which excels in these areas, is the ideal design solution
in this onerous application. To further support this application, the CLC501 is both
characterized and tested at a gain setting of +32, the most common gain setting for
residue amplifier applications.
The CLC501's other features provide a quick, high-performance design solution. Since the
CLC501's current feedback design requires no external compensation, designers need not
spend their time designing compensation networks. The small 8-pin package and low, 180mW
power consumption make the CLC501 ideal in numerous applications having small power and
size budgets.
Industry Part Number
CLC501A
Prime Die
UB1148C
Controlling Document
5962-8997401PA*,MXA**
NS Part Numbers
CLC501AJ-MLS
CLC501AJ-QML*
CLC501AWG-MLS
CLC501AWG-QML**
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description
1 Static tests at
2 Static tests at
3 Static tests at
4 Dynamic tests at
5 Dynamic tests at
6 Dynamic tests at
7 Functional tests at
8A Functional tests at
8B Functional tests at
9 Switching tests at
10 Switching tests at
11 Switching tests at
Temp ( oC)
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
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MNCLC501A-X Даташит, Описание, Даташиты
MNCLC501A-X REV 0A0
MICROCIRCUIT DATA SHEET
Features
- Output clamping (Vhigh and Vlow)
- 1ns recovery from clamping/overdrive
- 0.05% settling in 12ns
- Characterized and guaranteed at Av = +32
- Low power, 180mW
Applications
- Residue amplifier in high-accuracy, subranging A/D systems
- High-speed communications
- Output clamping applications
- Pulse amplitude modulation systems
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MNCLC501A-X Даташит, Описание, Даташиты
MNCLC501A-X REV 0A0
MICROCIRCUIT DATA SHEET
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage (Vs)
Output Current (Iout)
Junction Temperature (Tj)
Storage Temperature
Lead Temperature (soldering, 10 seconds)
Power Dissipation (Pd)
(Note 2)
Common Mode Input Voltage (Vcm)
Thermal Resistance
ThetaJA (Junction to Ambient)
CERAMIC DIP (Still Air)
(500LFPM)
SOIC
(Still Air)
(500LFPM)
ThetaJC (Juntion to Case)
CERAMIC DIP
SOIC
Package Weight
(Typical)
CERAMIC DIP
SOIC
ESD Tolerance
(Note 3)
ESD Rating
+7V dc
70mA
+175 C
-65 C to +150 C
+300 C
TBD
Vs
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
<1000V
Note 1:
Note 2:
Note 3:
Absolute Maximum Ratings are limits beyond which damage to the device may occur.
Operating Ratings are conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Human body model, 100pF discharged through 1.5K Ohms.
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Номер в каталогеОписаниеПроизводители
MNCLC501A-XHIGH-SPEED OUTPUT CLAMPING OP AMPNational Semiconductor
National Semiconductor

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